公开(公告)号：US20160017489A1

公开(公告)日：2016-01-21

申请号：US14772679

申请日：2014-03-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Andreas KOLLER ,  Alexander BEHRES

IPC: C23C16/448 ,  C23C16/52 ,  C23C16/18 ,  B01D1/14

CPC classification number: C23C16/4482 ,  B01D1/14 ,  C23C16/18 ,  C23C16/4481 ,  C23C16/52

Abstract: A method for supplying a process with an enriched carrier gas. A first apparatus and a second apparatus are provided. The first apparatus has a precursor and is configured to bring a carrier gas into contact with the precursor and to enrich the carrier gas with the precursor. The second apparatus has a precursor and is configured to bring a carrier gas into contact with the precursor and to enrich the carrier gas with the precursor. The first apparatus supplies the second apparatus with an enriched carrier gas. The second apparatus supplies the enriched carrier gas for the process. A temperature of the first apparatus is controlled as a function of a quantity of precursor in the second apparatus.

Abstract translation: 一种用于向富含载体气体提供过程的方法。 提供第一装置和第二装置。 第一装置具有前体并且构造成使载气与前体接触并且与前体富集载气。 第二装置具有前体并且构造成使载气与前体接触并且使前体富集载气。 第一装置向第二装置提供富集的载气。 第二装置提供用于该过程的富集的载气。 第一装置的温度作为第二装置中的前体的量的函数被控制。

公开(公告)号：US20220037848A1

公开(公告)日：2022-02-03

申请号：US17297289

申请日：2019-11-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin BEHRINGER ,  Hubert HALBRITTER ,  Matin MOHAJERANI ,  Alexander BEHRES

IPC: H01S5/026 ,  H01S5/42

Abstract: An optoelectronic semiconductor component comprises a first resonator mirror, an active region suitable for generating radiation, and a second resonator mirror, which are arranged one above another in each case along a first direction. The optoelectronic semiconductor component furthermore comprises a refractive index modulation layer within an optical resonator between the first resonator mirror and the second resonator mirror. The refractive index modulation layer comprises first regions of a first material having a first refractive index and also second regions of a second material having a second refractive index, wherein the first regions are arranged directly adjacent to the second regions in a plane perpendicular to the first direction.

公开(公告)号：US20220021185A1

公开(公告)日：2022-01-20

申请号：US17297688

申请日：2019-11-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin BEHRINGER ,  Alexander BEHRES ,  Matin MOHAJERANI

IPC: H01S5/183 ,  H01S5/327 ,  H01S5/042

Abstract: An optoelectronic semiconductor component has a first semiconductor layer of a p-conductivity type, a second semiconductor layer of an n-conductivity type and also an n-doped current distribution layer containing ZnSe and adjoining the second semiconductor layer.