公开(公告)号：US20220190552A1

公开(公告)日：2022-06-16

申请号：US17444082

申请日：2021-07-30

Applicant: OSRAM Opto Semiconductors GmbH ,  LUMUS LTD.

Inventor： Yochay DANZIGER ,  Ann RUSSELL

IPC: H01S5/02253 ,  H01S5/40 ,  H01S5/02255

Abstract: A laser device comprises a plurality of laser diodes, each laser diode emitting a light beam having a fast axis and a slow axis and a beam direction; and one or more optical components configured to modify a divergence of the light beams in a fast axis plane and/or in a slow axis plane such that the light beams have a same focal plane in the fast axis plane and in the slow axis plane.

公开(公告)号：US20220344905A1

公开(公告)日：2022-10-27

申请号：US17235996

申请日：2021-04-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hubert HALBRITTER ,  Ann RUSSELL

IPC: H01S5/34 ,  H01S5/11 ,  H01S5/40 ,  G03B21/20

Abstract: A semiconductor laser device comprises an active layer having a main extension plane, a first cladding layer and a second cladding layer where the active layer is arranged between the first and second cladding layer in a direction perpendicular to the main extension plane, at least one first emission region and at least one second emission region arranged next to each other in a direction parallel to the main extension plane, a light-outcoupling surface parallel to the main extension direction and arranged on a side of the second cladding layer opposite to the active layer, and a photonic crystal layer arranged in the first cladding layer or in second cladding layer. The photonic crystal layer may include a first photonic crystal structure in the first emission region and a second photonic crystal structure in the second emission region where the first and the second photonic crystal structures are different.

公开(公告)号：US20230163565A1

公开(公告)日：2023-05-25

申请号：US17530903

申请日：2021-11-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hubert HALBRITTER ,  Ann RUSSELL

IPC: H01S5/11 ,  H01S5/00 ,  H01S5/40 ,  H01S5/343

CPC classification number: H01S5/11 ,  H01S5/0064 ,  H01S5/0078 ,  H01S5/4012 ,  H01S5/343

Abstract: A semiconductor laser device is specified, the semiconductor laser device comprising an active layer having a main extension plane, a first cladding layer and a second cladding layer, the active layer being arranged between the first and second cladding layer in a direction perpendicular to the main extension plane, a light-outcoupling surface parallel to the main extension direction and arranged on a side of the second cladding layer opposite to the active layer, a photonic crystal layer arranged in the first cladding layer or in the second cladding layer, and an integrated optical element directly fixed to the light-outcoupling surface. Furthermore, a method for manufacturing a semiconductor laser device and a projection device are specified.