LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING COVER

    公开(公告)号:US20240291231A1

    公开(公告)日:2024-08-29

    申请号:US18586203

    申请日:2024-02-23

    IPC分类号: H01S5/0239 H01S5/00

    摘要: A light-emitting device includes a base member, a light-emitting element, and a cover. The cover has a lateral portion surrounding a periphery of the light-emitting element and an upper portion arranged above the light-emitting element. The cover includes a wavelength conversion member and a light-shielding member. The wavelength conversion member has an incident surface where the light emitted from the light-emitting element in the lateral direction is incident, at least a part of the wavelength conversion member constituting at least a part of the upper portion of the cover. A straight line, which passes through a light-emitting point of the light-emitting element and is parallel to an optical axis direction, passes through a part of the light-shielding member. At least the part of the light-shielding member is located, relative to the wavelength conversion member, on a side opposite from the light-emitting element in the optical axis direction.

    ELECTRO-ABSORPTION MODULATED LASER CHIP AND FABRICATION METHOD THEREOF

    公开(公告)号:US20230361526A1

    公开(公告)日:2023-11-09

    申请号:US18190318

    申请日:2023-03-27

    IPC分类号: H01S5/50 H01S5/026 H01S5/00

    摘要: The disclosure belongs to the technical field of photoelectric emission in semiconductors, and discloses an electro-absorption modulated laser chip and a fabrication method thereof, which can solve the problems of signal distortion caused by optical crosstalk between components in an existing electro-absorption modulated laser (EML) integrated with a semiconductor optical amplifier (SOA), and failure in longer-distance transmission. The laser chip includes: a laser light source; an electro-absorption modulator disposed on a light-emitting side of the laser light source; a semiconductor optical amplifier disposed on a light-emitting side of the electro-absorption modulator; and at least one isolation assembly disposed between the laser light source and the electro-absorption modulator, and/or, disposed between the electro-absorption modulator and the semiconductor optical amplifier, and configured to isolate optical crosstalk among the laser light source, the electro-absorption modulator, and the semiconductor optical amplifier. The disclosure is used for the electro-absorption modulated laser chip.

    SEMICONDUCTOR PACKAGE FOR AN EDGE EMITTING LASER DIODE

    公开(公告)号:US20230238770A1

    公开(公告)日:2023-07-27

    申请号:US18099687

    申请日:2023-01-20

    摘要: Provided herein is a semiconductor package and method of forming the same. The semiconductor package has a cap including a first window wafer with a first face and opposing second face, a second window wafer, and a perforated spacer wafer with through-holes extending therethrough. The first and second faces of the first window wafer are mutually parallel and at least one face includes an antireflective surface. The spacer wafer is disposed between the first and second window wafers with the first and second window wafers bonded to opposing faces of the spacer wafer. The window wafers and spacer wafer together define a cavity in the cap. An edge-emitting laser diode is disposed on a submount and configured to direct a laser beam at normal incidence to the first face of the first window wafer. The cap is mounted on the submount with the edge-emitting laser diode enclosed in the cavity.