公开(公告)号：US20220367422A1

公开(公告)日：2022-11-17

申请号：US17630109

申请日：2020-07-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Gunnar Petersen ,  Daniel Richter

IPC: H01L25/075 ,  H01L33/48 ,  H01L33/56 ,  H01L33/62

Abstract: In an embodiment a method includes providing a moldable substrate, applying at least one semiconductor chip to a first main surface of the moldable substrate, introducing the semiconductor chip into the moldable substrate by deforming the moldable substrate such that the semiconductor chip is embedded into the moldable substrate proceeding from the first main surface, wherein at least one electrical contact of the semiconductor chip is freely accessible from an outside, wherein the semiconductor chip is a radiation-emitting flip-chip, and wherein a radiation exit surface of the flip-chip is free of electrical contacts, providing a carrier having at least one electrical connection location on a first main surface and applying the carrier to the first main surface of the moldable substrate after introducing the semiconductor chip into the moldable substrate such that the at least one electrical contact of the semiconductor chip is electrically contacted with the electrical connection location.

公开(公告)号：US20200090975A1

公开(公告)日：2020-03-19

申请号：US16468324

申请日：2018-01-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Daniel Richter ,  Gunnar Petersen ,  Konrad Wagner

IPC: H01L21/683 ,  H01L21/78

Abstract: A method of selecting semiconductor chips includes: A) providing the semiconductor chips in a composite, B) producing a cohesive, mechanical first connection between the semiconductor chips and a carrier film, C) singulating the semiconductor chips, wherein the carrier film mechanically connects the semiconductor chips to one another after singulation, D) selectively weakening the first connection between some singulated semiconductor chips and the carrier film, depending on electro-optical and or electrical properties of the semiconductor chips, and E) removing the semiconductor chips whose first connection is selectively weakened from the carrier film.

公开(公告)号：US11763731B2

公开(公告)日：2023-09-19

申请号：US17610631

申请日：2020-04-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Brendan Holland ,  Gunnar Petersen ,  Daniel Richter

IPC: G09G3/32 ,  G09G3/20

CPC classification number: G09G3/32 ,  G09G3/2074 ,  G09G2300/0809 ,  G09G2310/066 ,  G09G2320/0242 ,  G09G2320/0653 ,  G09G2320/0686 ,  G09G2330/023

Abstract: A display apparatus includes a multiplicity of picture elements for emitting visible light in different colors in an adjustable manner by means of a plurality of semiconductor layer sequences. Each of the picture elements has a plurality of types of pixels and each type of pixels is configured for emitting light of a specific color. The pixels are each subdivided into a plurality of sub-pixel. All the sub-pixels are configured for emitting light of the same color out of the display apparatus without further color change. At least two sub-pixels within each pixel have emission areas of different sizes. An electrical control unit is assigned to each pixel. The control units are each configured to automatically control the sub-pixels of a relevant pixel depending on an energization intensity in such a way that a light-emitting area of the relevant pixel increases in stepped fashion with the energization intensity.

公开(公告)号：US11257705B2

公开(公告)日：2022-02-22

申请号：US16468324

申请日：2018-01-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Daniel Richter ,  Gunnar Petersen ,  Konrad Wagner

IPC: H01L21/683 ,  H01L21/78 ,  H01L25/00 ,  H01L23/00 ,  H01L21/52

Abstract: A method of selecting semiconductor chips includes: A) providing the semiconductor chips in a composite, B) producing a cohesive, mechanical first connection between the semiconductor chips and a carrier film, C) singulating the semiconductor chips, wherein the carrier film mechanically connects the semiconductor chips to one another after singulation, D) selectively weakening the first connection between some singulated semiconductor chips and the carrier film, depending on electro-optical and/or electrical properties of the semiconductor chips, and E) removing the semiconductor chips whose first connection is selectively weakened from the carrier film.