Optoelectronic sensor
    2.
    发明授权

    公开(公告)号:US11799048B2

    公开(公告)日:2023-10-24

    申请号:US17274312

    申请日:2019-10-08

    Abstract: In an embodiment an optoelectronic sensor includes a radiation-emitting semiconductor region, a radiation-detecting semiconductor region, a first polarization filter arranged above the radiation-emitting semiconductor region and including a first polarization direction and a second polarization filter arranged above the radiation-detecting semiconductor region and including a second polarization direction, wherein the first polarization direction and the second polarization direction are perpendicular to each other, wherein a radiation-reflecting or radiation-absorbing layer is arranged on side flanks of the radiation-emitting semiconductor region and/or the radiation-detecting semiconductor region and/or the first polarization filter and/or the second polarization filter.

    Method for Producing an Electronic Component, and Electronic Component

    公开(公告)号:US20220367422A1

    公开(公告)日:2022-11-17

    申请号:US17630109

    申请日:2020-07-23

    Abstract: In an embodiment a method includes providing a moldable substrate, applying at least one semiconductor chip to a first main surface of the moldable substrate, introducing the semiconductor chip into the moldable substrate by deforming the moldable substrate such that the semiconductor chip is embedded into the moldable substrate proceeding from the first main surface, wherein at least one electrical contact of the semiconductor chip is freely accessible from an outside, wherein the semiconductor chip is a radiation-emitting flip-chip, and wherein a radiation exit surface of the flip-chip is free of electrical contacts, providing a carrier having at least one electrical connection location on a first main surface and applying the carrier to the first main surface of the moldable substrate after introducing the semiconductor chip into the moldable substrate such that the at least one electrical contact of the semiconductor chip is electrically contacted with the electrical connection location.

    Control method for a display apparatus and display apparatus

    公开(公告)号:US11688332B2

    公开(公告)日:2023-06-27

    申请号:US17636118

    申请日:2020-08-18

    Abstract: A control method includes A) determining intrinsic activation times of individual semiconductor emitters of a display device. The display device includes a plurality of light-emitting semiconductor emitters with different intrinsic activation times. The method also includes B) determining and storing in each case an activation delay and/or a turn-on current change for each individual one of the semiconductor emitters. The method further includes C) energizing the individual semiconductor emitters according to the previously determined activation delay and/or turn-on current change, so that in a display mode of the display device the semiconductor emitters have equally long starting times for a light emission.

    Optoelectronic Sensor Arrangement and Optical Measuring Method

    公开(公告)号:US20220102562A1

    公开(公告)日:2022-03-31

    申请号:US17425596

    申请日:2020-01-29

    Abstract: In an embodiment an optoelectronic sensor arrangement includes a carrier substrate, an illuminating device, a frequency-selective optical element and a photodetector, wherein the illuminating device and the photodetector form a stacked arrangement on or with the carrier substrate, wherein the frequency-selective optical element is arranged between the illuminating device and the photodetector, wherein the photodetector is arranged in a cavity of the carrier substrate which is covered by the illuminating device and/or the frequency-selective optical element, and wherein the frequency-selective optical element includes a divider mirror and an optical filter.

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