公开(公告)号：US10854784B2

公开(公告)日：2020-12-01

申请号：US16331121

申请日：2017-09-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Rudolf Behringer ,  Brendan Holland ,  Jana Sommerfeld ,  Sabine vom Dorp

IPC: H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/40

Abstract: A method for producing an electrical contact on a semiconductor layer and a semiconductor component having an electrical contact are disclosed. In an embodiment a method includes providing a semiconductor layer, forming a plurality of contact rods on the semiconductor layer, wherein the contact rods are formed by a first material and a second material, wherein the first material is applied to the semiconductor layer and the second material is applied to the first material, and wherein a lateral structure of the first material is self-organized, forming a filling layer on the contact rods and in intermediate spaces between the contact rods and exposing the contact rods.

公开(公告)号：US20190229241A1

公开(公告)日：2019-07-25

申请号：US16331121

申请日：2017-09-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Rudolf Behringer ,  Brendan Holland ,  Jana Sommerfeld ,  Sabine vom Dorp

IPC: H01L33/38 ,  H01L33/42 ,  H01L33/44

Abstract: A method for producing an electrical contact on a semiconductor layer and a semiconductor component having an electrical contact are disclosed. In an embodiment a method includes providing a semiconductor layer, forming a plurality of contact rods on the semiconductor layer, wherein the contact rods are formed by a first material and a second material, wherein the first material is applied to the semiconductor layer and the second material is applied to the first material, and wherein a lateral structure of the first material is self-organized, forming a filling layer on the contact rods and in intermediate spaces between the contact rods and exposing the contact rods.