公开(公告)号：US20200255733A1

公开(公告)日：2020-08-13

申请号：US16270528

申请日：2019-02-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Weiwen Zhao ,  Juanita N. Kurtin ,  Joseph A. Treadway ,  Brian Theobald

IPC: C09K11/88 ,  H01L33/50 ,  C09K11/02

Abstract: A method for fabricating a connected network of oxide-coated semiconductor structure, comprising: preparing a first solution comprising a nanocrystalline material and a first solvent; preparing a second solution comprising a surfactant and a second solvent; adding the first solution and a bifunctional linker to the second solution, thereby preparing a third solution; adding a catalyst, water and a silicate to the third solution; thereby preparing a connected network of oxide-coated semiconductor structure; wherein the ratio of the water to surfactant is more than 3.5. Furthermore, an oxide-coated semiconductor structure and a light source comprising an oxide-coated semiconductor structure are described herein.

公开(公告)号：US11407938B2

公开(公告)日：2022-08-09

申请号：US16777921

申请日：2020-01-31

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Erik Johansson ,  Joseph A. Treadway ,  Juanita N. Kurtin

IPC: C09K11/02 ,  B82Y20/00 ,  H01L33/50

Abstract: A structure may include a quantum structure and a barrier layer that may coat the quantum structure. The barrier layer may include aluminum and at least one material that is X1, X2, Si, O, or combinations thereof where X1 and X2 are monovalent positively charged elements and/or divalent positively charged elements. In addition, an agglomerate, a conversion element, and a method of producing a structure are disclosed.

公开(公告)号：US20210296440A1

公开(公告)日：2021-09-23

申请号：US16822213

申请日：2020-03-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Joseph A. Treadway ,  Benjamin Daniel Mangum ,  David O'Brien

IPC: H01L29/06 ,  H01L23/552 ,  H05K9/00

Abstract: A semiconductor nanocrystal structure may include a core, an inner absorption shell surrounding the core, at least one emission shell surrounding the inner absorption shell, and an outer absorption shell surrounding the emission shell(s). The core may include a different material than the optional inner absorption shell and/or the outer absorption shell. The core may be less absorbent to electromagnetic radiation as compared to the optional inner absorption shell and/or the outer absorption shell. An optoelectronic device may include the semiconductor nanocrystal structure.

公开(公告)号：US11152463B2

公开(公告)日：2021-10-19

申请号：US16822213

申请日：2020-03-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Joseph A. Treadway ,  Benjamin Daniel Mangum ,  David O'Brien

IPC: H01L29/06 ,  H05K9/00 ,  H01L23/552

Abstract: A semiconductor nanocrystal structure may include a core, an inner absorption shell surrounding the core, at least one emission shell surrounding the inner absorption shell, and an outer absorption shell surrounding the emission shell(s). The core may include a different material than the optional inner absorption shell and/or the outer absorption shell. The core may be less absorbent to electromagnetic radiation as compared to the optional inner absorption shell and/or the outer absorption shell. An optoelectronic device may include the semiconductor nanocrystal structure.