Light-Emitting Device
    1.
    发明申请

    公开(公告)号:US20210305470A1

    公开(公告)日:2021-09-30

    申请号:US17344495

    申请日:2021-06-10

    Abstract: A light emitting device is disclosed. In an embodiment a light-emitting device includes a pixel comprising at least three sub-pixels, wherein the at least three sub-pixel include a first sub-pixel including a first conversion element, wherein the first conversion element includes a green phosphor, a second sub-pixel including a second conversion element, wherein the second conversion element includes a red phosphor and a third sub-pixel free of a conversion element, wherein the third sub-pixel is configured to emit blue primary radiation, wherein each sub-pixels has an edge length of at most 100 μm, and wherein the pixel is a linear chain of sub-pixels and a plurality of pixels is arranged in a two dimensional ordered pattern so that a first sub-pixel is never adjacent to a third sub-pixel in a vertical direction and in a horizontal direction of the ordered pattern.

    SEMICONDUCTOR NANOCRYSTAL STRUCTURE AND OPTOELECTRONIC DEVICE

    公开(公告)号:US20210296440A1

    公开(公告)日:2021-09-23

    申请号:US16822213

    申请日:2020-03-18

    Abstract: A semiconductor nanocrystal structure may include a core, an inner absorption shell surrounding the core, at least one emission shell surrounding the inner absorption shell, and an outer absorption shell surrounding the emission shell(s). The core may include a different material than the optional inner absorption shell and/or the outer absorption shell. The core may be less absorbent to electromagnetic radiation as compared to the optional inner absorption shell and/or the outer absorption shell. An optoelectronic device may include the semiconductor nanocrystal structure.

    Light-emitting device
    5.
    发明授权

    公开(公告)号:US11626545B2

    公开(公告)日:2023-04-11

    申请号:US17344495

    申请日:2021-06-10

    Abstract: A light emitting device is disclosed. In an embodiment a light-emitting device includes a pixel comprising at least three sub-pixels, wherein the at least three sub-pixel include a first sub-pixel including a first conversion element, wherein the first conversion element includes a green phosphor, a second sub-pixel including a second conversion element, wherein the second conversion element includes a red phosphor and a third sub-pixel free of a conversion element, wherein the third sub-pixel is configured to emit blue primary radiation, wherein each sub-pixels has an edge length of at most 100 μm, and wherein the pixel is a linear chain of sub-pixels and a plurality of pixels is arranged in a two dimensional ordered pattern so that a first sub-pixel is never adjacent to a third sub-pixel in a vertical direction and in a horizontal direction of the ordered pattern.

    Semiconductor nanocrystal structure and optoelectronic device

    公开(公告)号:US11152463B2

    公开(公告)日:2021-10-19

    申请号:US16822213

    申请日:2020-03-18

    Abstract: A semiconductor nanocrystal structure may include a core, an inner absorption shell surrounding the core, at least one emission shell surrounding the inner absorption shell, and an outer absorption shell surrounding the emission shell(s). The core may include a different material than the optional inner absorption shell and/or the outer absorption shell. The core may be less absorbent to electromagnetic radiation as compared to the optional inner absorption shell and/or the outer absorption shell. An optoelectronic device may include the semiconductor nanocrystal structure.

    Light-Emitting Device
    8.
    发明申请

    公开(公告)号:US20210013381A1

    公开(公告)日:2021-01-14

    申请号:US16504845

    申请日:2019-07-08

    Abstract: A light emitting device is disclosed. In an embodiment a light-emitting device includes a pixel comprising at least three sub-pixels, wherein a first sub-pixel includes a first conversion element having a green phosphor, wherein a second sub-pixel includes a second conversion element having a red phosphor and wherein a third sub-pixel is free of a conversion element, the third sub-pixel configured to emit blue primary radiation, wherein each sub-pixel has an edge length of at most 100 μm, and wherein the light-emitting device is configured to enhance a gamut coverage of an emitted radiation.

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