公开(公告)号：US20210083160A1

公开(公告)日：2021-03-18

申请号：US16769866

申请日：2017-12-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Choo Kean Lim ,  Choon Keat Or ,  Siew Yan Chua ,  Choon Kim Lim

IPC: H01L33/62 ,  H01L23/00 ,  H01L33/64

Abstract: A semiconductor device and a method for producing a carrier element suitable for a semiconductor device are disclosed. In an embodiment a semiconductor device includes a carrier element including a carrier layer having a first depression extending from a first main surface of the carrier layer in a direction of a second main surface of the carrier layer opposite the first main surface and a metal substrate and an electrically insulating layer on at least a portion of the metal substrate, a first electrically conductive filling component arranged in the first depression in a form-fitting manner, the electrically insulating layer being arranged between the metal substrate and the first filling component and a semiconductor chip arranged on the carrier element, wherein the electrically insulating layer is an anodization layer.