公开(公告)号：US11348906B2

公开(公告)日：2022-05-31

申请号：US16982066

申请日：2018-03-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Choon Kim Lim

IPC: H01L25/075 ,  H01L33/00 ,  H01L25/16 ,  H01L33/50

Abstract: An optoelectronic device comprises a phosphor plate, an optoelectronic chip comprising a layer stack of a first optoelectronic semiconductor layer and a second optoelectronic semiconductor layer, a first electrode, and a second electrode. The optoelectronic chip is attached to the phosphor plate, so that the second optoelectronic semiconductor layer is arranged between the phosphor plate and the first optoelectronic semiconductor layer. The first electrode and the second electrode are arranged on a first main surface of the first optoelectronic semiconductor layer on a side remote from the phosphor plate. The second electrode directly contacts the first optoelectronic semiconductor layer.

公开(公告)号：US10854788B2

公开(公告)日：2020-12-01

申请号：US16311676

申请日：2017-07-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Choo Kean Lim ,  Choon Keat Or ,  Choon Kim Lim ,  Ai Cheng Chan

IPC: H01L33/48 ,  H01L21/683 ,  H01L33/50 ,  H01L33/54 ,  H01L33/62

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method includes attaching a plurality of optoelectronic semiconductor chips on predetermined locations of an intermediate film, providing a cavity film with a plurality of separated openings, attaching the cavity film to the intermediate film such that each optoelectronic semiconductor chip is associated with a respective opening, wherein the cavity film is thicker than the optoelectronic semiconductor chips such that the cavity film exceeds the optoelectronic semiconductor chips in a direction away from the intermediate film, filling a casting material in each of the openings such that the optoelectronic semiconductor chips are casted with the casting material and removing the intermediate film.

公开(公告)号：US11362240B2

公开(公告)日：2022-06-14

申请号：US16616126

申请日：2017-05-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Choon Kim Lim ,  Choo Kean Lim ,  Hui Chiang Teoh

IPC: H01L33/50 ,  A61L2/10 ,  A61L2/26 ,  C09K11/08 ,  A61N5/06

Abstract: The invention refers to a light emitting device including a semiconductor chip having a main radiation surface, which emits UV light in operation, a phosphor, which is arranged in the radiation beam of the UV light, absorbs partially the UV light, wherein the phosphor converts the UV light into visible light so that the device emits mixed light comprising the UV light as well as visible light.

公开(公告)号：US20210083160A1

公开(公告)日：2021-03-18

申请号：US16769866

申请日：2017-12-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Choo Kean Lim ,  Choon Keat Or ,  Siew Yan Chua ,  Choon Kim Lim

IPC: H01L33/62 ,  H01L23/00 ,  H01L33/64

Abstract: A semiconductor device and a method for producing a carrier element suitable for a semiconductor device are disclosed. In an embodiment a semiconductor device includes a carrier element including a carrier layer having a first depression extending from a first main surface of the carrier layer in a direction of a second main surface of the carrier layer opposite the first main surface and a metal substrate and an electrically insulating layer on at least a portion of the metal substrate, a first electrically conductive filling component arranged in the first depression in a form-fitting manner, the electrically insulating layer being arranged between the metal substrate and the first filling component and a semiconductor chip arranged on the carrier element, wherein the electrically insulating layer is an anodization layer.

公开(公告)号：US20200013917A1

公开(公告)日：2020-01-09

申请号：US16488068

申请日：2017-02-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Choon Kim Lim ,  Choo Kean Lim ,  Jeok Pheng Go

IPC: H01L31/167 ,  H01L31/0203 ,  H01L31/02

Abstract: A sensor element is disclosed. In an embodiment a sensor element includes a substrate, a light emitting semiconductor chip arranged with a mounting face on a mounting face of the substrate, wherein the semiconductor chip has a smaller mounting face than the substrate, wherein a border area of the mounting face of the substrate circumvents the semiconductor chip, wherein on a bottom side of the semiconductor chip electrical contacts are arranged, and wherein the substrate is transparent for radiation of the semiconductor chip, a carrier, wherein the bottom side of the semiconductor chip is arranged on a mounting face of the carrier, wherein the carrier includes further electrical contacts on the mounting face, and wherein the contacts of the semiconductor chip and the further contacts of the carrier are connected, a sealing member arranged between the mounting face of the carrier and the border area of the substrate, wherein the sealing member seals a sealing area between the substrate and the carrier, wherein a recess is arranged in the mounting face of the carrier, and an optical sensor arranged in the recess.