公开(公告)号：US20040149085A1

公开(公告)日：2004-08-05

申请号：US10760667

申请日：2004-01-20

Applicant: OSRAM SYLVANIA Inc.

Inventor： Raj Pal Singh Gaur ,  Scott A. Braymiller ,  Thomas A. Wolfe ,  Michael R. Pierce ,  David L. Houck

IPC: B22F009/24

CPC classification number: B22F1/0096 ,  B22F9/24 ,  B22F2999/00 ,  C22C1/045 ,  H01H11/048 ,  H01L23/3736 ,  H01L23/488 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electrochemical displacement-deposition method for making composite metal powders is described. The method is carried out by combining tungsten or molybdenum metal particles with particles of silver oxide or copper oxide in an aqueous hydroxide solution. Heat is applied to the solution to cause the oxide particles to convert to silver or copper metal particles which are substantially adhered to the refractory metal particles. Unlike conventional methods, it is not necessary to heat the oxide powders to a very high temperature in a reducing atmosphere in order to form the composite metal powder.

Abstract translation: 描述了制备复合金属粉末的电化学位移沉积方法。 该方法通过在氢氧化物水溶液中将钨或钼金属颗粒与氧化银或氧化铜的颗粒结合来进行。 对溶液施加热量，使氧化物颗粒转化为基本上粘附到难熔金属颗粒上的银或铜金属颗粒。 与常规方法不同，为了形成复合金属粉末，在还原气氛中不需要将氧化物粉末加热到非常高的温度。

公开(公告)号：US20040177720A1

公开(公告)日：2004-09-16

申请号：US10389321

申请日：2003-03-14

Applicant: OSRAM SYLVANIA Inc.

Inventor： Kenneth H. Shaner ,  Michael R. Pierce

IPC: C22C013/00 ,  B22F003/02

CPC classification number: C22C1/045 ,  B22F1/0003 ,  B22F2998/10 ,  F42B12/74 ,  B22F1/0048 ,  B22F3/02

Abstract: A tungsten-tin composite for green (lead-free) ammunition is provided wherein the composite is made with a spheroidized tungsten powder and has mechanical properties similar to those of lead. The composite may be fully densified at pressures less than about 250 MPa and is suitable for pressing complex projectile shapes to near net size.

Abstract translation: 提供了一种用于绿色（无铅）弹药的钨 - 锡复合材料，其中复合材料由球状钨粉制成，并具有与铅相似的机械性能。 复合材料可以在低于约250MPa的压力下完全致密化，并且适合于将复杂的抛射体形状压制成接近净尺寸。

公开(公告)号：US20040004301A1

公开(公告)日：2004-01-08

申请号：US10189620

申请日：2002-07-03

Applicant: OSRAM SYLVANIA Inc.

Inventor： Raj P. Singh ,  David L. Houck ,  Nelson E. Kopatz ,  Michael R. Pierce ,  Scott A. Braymiller

IPC: B29B009/00

CPC classification number: C30B29/06 ,  C01B33/02 ,  C30B15/00

Abstract: A method for spheridizing silicon metal particles is described. The method involves injecting irregular silicon metal particles into a high-temperature plasma reactor to melt at least 50 weight percent of the particles. The molten droplets are solidified to form substantially spherical silicon particles having a thin SiO coating which may be removed by treating with a weak hydroxide solution.