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公开(公告)号：US08263965B2
公开(公告)日：2012-09-11
申请号：US13004384
申请日：2011-01-11
IPC分类号： H01L29/12
CPC分类号： H01L29/04 , B82Y10/00 , G02B1/02 , G02B5/18 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/02513 , H01L21/02532 , H01L31/0352 , Y10T428/29
摘要： A single-crystal layer of a first semiconductor material including single-crystal nanostructures of a second semiconductor material, the nanostructures being distributed in a regular crystallographic network with a centered tetragonal prism.
摘要翻译： 包括第二半导体材料的单晶纳米结构的第一半导体材料的单晶层，所述纳米结构分布在具有中心四棱柱的规则晶体网络中。
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公开(公告)号：US20080239625A1
公开(公告)日：2008-10-02
申请号：US12059497
申请日：2008-03-31
CPC分类号： H01L29/66931 , H01L29/66136 , H01L29/861 , H01L29/945
摘要： A method for manufacturing an electronic component on a semiconductor substrate, including forming at least one opening in the substrate; forming in the bottom and on the walls of the opening and on the substrate an alternated succession of layers of a first material and of a second material, the second material being selectively etchable with respect to the first material and the substrate; trimming the layer portions of the first material and of the second material which are not located in the opening; selectively etching a portion of the first material to obtain trenches; and filling the trenches with at least one third material.
摘要翻译： 一种在半导体衬底上制造电子部件的方法，包括在所述衬底中形成至少一个开口; 在所述开口的底部和所述壁的所述基板上形成交替连续的第一材料层和第二材料层，所述第二材料相对于所述第一材料和所述基板可选择性地蚀刻; 修剪不位于开口中的第一材料和第二材料的层部分; 选择性蚀刻第一材料的一部分以获得沟槽; 并用至少一个第三材料填充沟槽。
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公开(公告)号：US07884352B2
公开(公告)日：2011-02-08
申请号：US10583235
申请日：2004-12-16
IPC分类号： H01L31/00
CPC分类号： H01L29/04 , B82Y10/00 , G02B1/02 , G02B5/18 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/02513 , H01L21/02532 , H01L31/0352 , Y10T428/29
摘要： The invention relates to a single-crystal layer of a first semiconductor material including single-crystal nanostructures of a second semiconductor material, the nanostructures being distributed in a regular crystallographic network with a centered tetragonal prism.
摘要翻译： 本发明涉及包括第二半导体材料的单晶纳米结构的第一半导体材料的单晶层，该纳米结构分布在具有中心四棱柱的规则晶体网络中。
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公开(公告)号：US07879679B2
公开(公告)日：2011-02-01
申请号：US12059497
申请日：2008-03-31
IPC分类号： H01L21/331
CPC分类号： H01L29/66931 , H01L29/66136 , H01L29/861 , H01L29/945
摘要： A method for manufacturing an electronic component on a semiconductor substrate, including forming at least one opening in the substrate; forming in the bottom and on the walls of the opening and on the substrate an alternated succession of layers of a first material and of a second material, the second material being selectively etchable with respect to the first material and the substrate; trimming the layer portions of the first material and of the second material which are not located in the opening; selectively etching a portion of the first material to obtain trenches; and filling the trenches with at least one third material.
摘要翻译： 一种在半导体衬底上制造电子部件的方法，包括在所述衬底中形成至少一个开口; 在所述开口的底部和所述壁的所述基板上形成交替连续的第一材料层和第二材料层，所述第二材料相对于所述第一材料和所述基板可选择性地蚀刻; 修剪不位于开口中的第一材料和第二材料的层部分; 选择性蚀刻第一材料的一部分以获得沟槽; 并用至少一个第三材料填充沟槽。
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