公开(公告)号：US20050003673A1

公开(公告)日：2005-01-06

申请号：US10612123

申请日：2003-07-02

Applicant: Omid Mahdavi

Inventor： Omid Mahdavi

IPC: C23F4/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3213 ,  H01L21/461

CPC classification number: H01L28/24 ,  B81C99/0065 ,  B81C2201/0138 ,  C23F4/00 ,  H01J37/32082 ,  H01L21/32136

Abstract: A thin film resistor is formed by employing a plasma etch on a resistor material layer. The resistor material layer can be fabricated employing a nickel chromium (NiCr) alloy, or nickel chromium aluminum (NiCrAl) alloy. A plasma etch is performed in a magnetically enhanced low pressure environment with a chlorine chemistry mixture. The magnetically enhanced low pressure environment and the sufficiently selective chlorine chemistry provide a substantially controlled plasma etch of the resistor material layer to form the thin film resistor. In-situ thickness measurements or an endpoint optical emission system can be employed to determine when to halt the etching process to mitigate damage associated with etching of the layer underlying the thin film resistor.

Abstract translation: 通过在电阻材料层上采用等离子体蚀刻来形成薄膜电阻器。 可以使用镍铬（NiCr）合金或镍铬铝（NiCrAl）合金制造电阻材料层。 在具有氯化学混合物的磁增强低压环境中进行等离子体蚀刻。 磁增强的低压环境和足够选择的氯化学物质提供电阻材料层的基本上受控的等离子体蚀刻以形成薄膜电阻器。 可以使用原位厚度测量或端点光发射系统来确定何时停止蚀刻工艺以减轻与薄膜电阻器下面的层的蚀刻相关的损伤。