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公开(公告)号：US20190084830A1
公开(公告)日：2019-03-21
申请号：US16030256
申请日：2018-07-09
申请人： Hitachi, Ltd.
发明人： Misuzu SAGAWA , Atsushi ISOBE
IPC分类号： B81C99/00
CPC分类号： B81C99/006 , B81C99/0025 , B81C99/0065
摘要： In a calculator in a MEMS manufacturing system, a stage control unit inclines a stage based on a stage angle 1 setting a stage inclination angle and a stage angle 2 of the inclination angle different from the stage angle 1. A stage-angle calculation unit calculates the stage inclination angles from first and second images acquired by a SEM apparatus when the stage control unit sets the stage at the stage angles 1 and 2. A 3D-data creation unit creates three-dimensional device data from a third image that is a device image acquired when the stage is set at the stage angle 1 and a fourth image that is a device image acquired when the stage is set at the stage angle 2. When the three-dimensional device data is created, a correction value calculated from the stage angles 1 and 2 and the first and second images is used.
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2.发明申请公开(公告)号：US20190062157A1
公开(公告)日：2019-02-28
申请号：US16015640
申请日：2018-06-22
申请人： HITACHI, LTD.
IPC分类号： B81C99/00 , B81C1/00 , H01J37/317 , H01J37/304 , H01J37/147 , G03F7/20
CPC分类号： B81C99/0025 , B81C1/00412 , B81C99/0065 , B81C2201/0143 , B81C2201/0159 , B81C2201/0198 , G03F7/2059 , H01J37/1474 , H01J37/304 , H01J37/3056 , H01J37/3174 , H01J2237/28 , H01J2237/31749 , H01J2237/31755 , H01J2237/31776
摘要： The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view.The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.
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3.发明授权公开(公告)号：US08702956B2
公开(公告)日：2014-04-22
申请号：US13356398
申请日：2012-01-23
申请人： Uri Frodis , Adam L. Cohen , Michael S. Lockard
发明人： Uri Frodis , Adam L. Cohen , Michael S. Lockard
CPC分类号： C25D5/48 , B33Y10/00 , B81C1/00492 , B81C99/0065 , B81C2201/0104 , B81C2201/0197 , C25D1/00 , C25D1/003 , C25D5/022 , C25D5/10 , C25D21/12 , H01L21/2885 , H01L21/76885 , Y10T156/1052
摘要： Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine.
摘要翻译： 本发明的一些实施例提供了用于电化学制造多层结构（例如中尺度或微结构）的方法和装置，其具有改进的端点检测和用于在电化学制造过程中被平坦化的材料（例如层）的并行维护。 一些方法涉及在平坦化期间使用夹具，其确保材料的平面化平面平行于给定公差内的其它沉积平面。 一些方法涉及使用端点检测夹具，其相对于第一沉积层或相对于在制造过程期间形成的一些其它层，相对于衬底的初始表面确保沉积材料的精确高度。 在一些实施例中，平面化可以通过研磨发生，而其他实施例可以使用金刚石切片机。
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公开(公告)号：US08652971B2
公开(公告)日：2014-02-18
申请号：US13411861
申请日：2012-03-05
IPC分类号： H01L21/461 , H01L23/544
CPC分类号： B81C1/00626 , B81B2203/0315 , B81C99/0065
摘要： A MEMS device having a device cavity in a substrate has a cavity etch monitor proximate to the device cavity. An overlying layer including dielectric material is formed over the substrate. A monitor scale is formed in or on the overlying layer. Access holes are etched through the overlying layer and a cavity etch process forms the device cavity and a monitor cavity. The monitor scale is located over a lateral edge of the monitor cavity. The cavity etch monitor includes the monitor scale and monitor cavity, which allows visual measurement of a lateral width of the monitor cavity; the lateral dimensions of the monitor cavity being related to lateral dimensions of the device cavity.
摘要翻译： 在衬底中具有器件空腔的MEMS器件具有靠近器件腔的腔蚀刻监测器。 在衬底上形成包括电介质材料的覆盖层。 监视器刻度形成在上层上或上。 通过覆盖层蚀刻通孔，并且腔蚀刻工艺形成器件腔和监测腔。 监视器刻度位于监视器腔的侧边缘上方。 腔蚀刻监视器包括监视器刻度和监视器腔，其允许视觉测量监视器腔的横向宽度; 监视器腔的横向尺寸与装置腔的横向尺寸有关。
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公开(公告)号：US20130137195A1
公开(公告)日：2013-05-30
申请号：US13674482
申请日：2012-11-12
发明人： Oliver James Ansell
IPC分类号： H01L21/60
CPC分类号： H01J37/32963 , B81C99/0065 , B81C2201/0135 , B81C2201/0142 , H01J37/32972 , H01L22/26
摘要： A method of etching the whole width of a substrate to expose buried features is disclosed. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed.
摘要翻译： 公开了一种蚀刻衬底的整个宽度以暴露掩埋特征的方法。 该方法包括在其宽度上蚀刻衬底的表面以实现材料的基本上均匀的去除; 在蚀刻过程中照射蚀刻的面; 将边缘检测技术应用于从脸部反射或散射的光，以检测埋藏特征的外观; 以及响应于所述掩埋特征的检测来修改所述蚀刻。 还公开了一种用于蚀刻衬底跨越其宽度以暴露掩埋的蚀刻装置。
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6.发明授权Differential critical dimension and overlay metrology apparatus and measurement method 失效差分关键尺寸和覆盖计量仪器及测量方法公开(公告)号：US08035824B2
公开(公告)日：2011-10-11
申请号：US12607392
申请日：2009-10-28
CPC分类号： G03F7/70691 , B81C99/0065 , G03F7/70608 , G03F7/70625 , G03F7/70633
摘要： A method is described for measuring a dimension on a substrate, wherein a target pattern is provided with a nominal characteristic dimension that repeats at a primary pitch of period P, and has a pre-determined variation orthogonal to the primary direction. The target pattern formed on the substrate is then illuminated so that at least one non-zero diffracted order is detected. The response of the non-zero diffracted order to variation in the printed characteristic dimension relative to nominal is used to determine the dimension of interest, such as critical dimension or overlay, on the substrate. An apparatus for performing the method of the present invention includes an illumination source, a detector for detecting a non-zero diffracted order, and means for positioning the source relative to the target so that one or more non-zero diffracted orders from the target are detected at the detector.
摘要翻译： 描述了一种用于测量衬底上的尺寸的方法，其中目标图案被提供有以周期P的主音调重复的标称特征尺寸，并且具有与主方向垂直的预定变化。 然后照亮形成在基板上的目标图案，使得检测到至少一个非零衍射顺序。 使用非零衍射顺序对打印特征尺寸相对于标称值的变化的响应来确定感兴趣的尺寸，例如衬底上的临界尺寸或覆盖层。 用于执行本发明的方法的装置包括照明源，用于检测非零衍射阶数的检测器，以及用于相对于目标定位源的装置，使得来自目标的一个或多个非零衍射阶数为 在检测器处检测到。
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7.发明授权Differential critical dimension and overlay metrology apparatus and measurement method 失效差分关键尺寸和覆盖计量仪器及测量方法公开(公告)号：US07700247B2
公开(公告)日：2010-04-20
申请号：US10596614
申请日：2003-12-19
CPC分类号： G03F7/70691 , B81C99/0065 , G03F7/70608 , G03F7/70625 , G03F7/70633
摘要： A method is described for measuring a dimension on a substrate, wherein a target pattern is provided with a nominal characteristic dimension that repeats at a primary pitch of period P, and has a pre-determined variation orthogonal to the primary direction. The target pattern formed on the substrate is then illuminated so that at least one non-zero diffracted order is detected. The response of the non-zero diffracted order to variation in the printed characteristic dimension relative to nominal is used to determine the dimension of interest, such as critical dimension or overlay, on the substrate. An apparatus for performing the method of the present invention includes an illumination source, a detector for detecting a non-zero diffracted order, and means for positioning the source relative to the target so that one or more non-zero diffracted orders from the target are detected at the detector.
摘要翻译： 描述了一种用于测量衬底上的尺寸的方法，其中目标图案被提供有以周期P的主音调重复的标称特征尺寸，并且具有与主方向垂直的预定变化。 然后照亮形成在基板上的目标图案，使得检测到至少一个非零衍射顺序。 使用非零衍射顺序对打印特征尺寸相对于标称值的变化的响应来确定感兴趣的尺寸，例如衬底上的临界尺寸或覆盖层。 用于执行本发明的方法的装置包括照明源，用于检测非零衍射阶数的检测器，以及用于相对于目标定位源的装置，使得来自目标的一个或多个非零衍射阶数为 在检测器处检测到。
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8.发明授权公开(公告)号：US07588674B2
公开(公告)日：2009-09-15
申请号：US11028944
申请日：2005-01-03
申请人： Uri Frodis , Adam L. Cohen , Michael S. Lockard
发明人： Uri Frodis , Adam L. Cohen , Michael S. Lockard
IPC分类号： C25D5/52
CPC分类号： C25D5/48 , B33Y10/00 , B81C1/00492 , B81C99/0065 , B81C2201/0104 , B81C2201/0197 , C25D1/00 , C25D1/003 , C25D5/022 , C25D5/10 , C25D21/12 , H01L21/2885 , H01L21/76885 , Y10T156/1052
摘要： Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine.
摘要翻译： 本发明的一些实施例提供了用于电化学制造多层结构（例如中尺度或微结构）的方法和装置，其具有改进的端点检测和用于在电化学制造过程中被平坦化的材料（例如层）的并行维护。 一些方法涉及在平坦化期间使用夹具，其确保材料的平面化平面平行于给定公差内的其它沉积平面。 一些方法涉及使用端点检测夹具，其相对于第一沉积层或相对于在制造过程期间形成的一些其它层，相对于衬底的初始表面确保沉积材料的精确高度。 在一些实施例中，平面化可以通过研磨发生，而其他实施例可以使用金刚石切片机。
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9.发明申请公开(公告)号：US20080318344A1
公开(公告)日：2008-12-25
申请号：US11767430
申请日：2007-06-22
申请人： Marjorio Rafanan
发明人： Marjorio Rafanan
IPC分类号： H01L21/465 , G06F19/00
CPC分类号： B81C1/00476 , B81C1/00801 , B81C99/0065 , B81C2201/0138
摘要： Embodiments of the present invention relate to methods and systems for making a microelectromechanical system comprising supplying an etchant to etch one or more sacrificial structures of the system.
摘要翻译： 本发明的实施例涉及用于制造微机电系统的方法和系统，包括提供蚀刻剂以蚀刻系统的一个或多个牺牲结构。
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公开(公告)号：US20080157078A1
公开(公告)日：2008-07-03
申请号：US12045515
申请日：2008-03-11
CPC分类号： B81C1/00476 , B81C99/0065
摘要： A method of indicating the progress of a sacrificial material removal process, the method, comprising; freeing a portion of a member, the member being disposed in a cage and laterally surrounded by the sacrificial material; and preventing the freed portion of the member from floating away by retaining the freed member.
摘要翻译： 一种表示牺牲材料去除过程进展的方法，该方法包括： 释放构件的一部分，所述构件设置在笼中并被牺牲材料横向包围; 并且通过保持释放的构件来防止构件的释放部分浮起。
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