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    Method And Apparatus For Monitoring Plasma Conditions In An Etching Plasma Processing Facility
    3.
    发明申请
    Method And Apparatus For Monitoring Plasma Conditions In An Etching Plasma Processing Facility 审中-公开
    用于在蚀刻等离子体处理设备中监测等离子体条件的方法和装置

    公开(公告)号：US20080134757A1

    公开(公告)日：2008-06-12

    申请号：US11908668

    申请日：2006-03-15

    Applicant: Ing-Shin Chen ,  Jeffrey W. Neuner ,  Frank Dimeo ,  Philip S.H. Chen ,  James J. Welch ,  Jeffrey F. Roeder

    Inventor： Ing-Shin Chen ,  Jeffrey W. Neuner ,  Frank Dimeo ,  Philip S.H. Chen ,  James J. Welch ,  Jeffrey F. Roeder

    IPC: G01N25/36

    CPC classification number: B81C1/00587 ,  B81C99/0065 ,  B81C2201/0138 ,  C23C16/4405 ,  G01N27/16 ,  H01J37/32935

    Abstract: A gas sensor and method of gas sensing, e.g., of a type as useful with downstream sensor elements for determining the plasma conditions (e.g., plasma etching end point) in a semiconductor etching facility that utilizes halogen-containing plasma and/or oxygen-containing plasma. Such sensor elements are capable of exhibiting temperature change in the presence of energetic gas species, e.g., fluorine, chlorine, iodine, bromine, oxygen, and derivatives and radicals thereof that are generated by the plasma, and correspondingly generating an output signal indicative of such temperature change for determination of the plasma conditions in the etching plasma processing facility.

    Abstract translation: 一种气体传感器和气体传感方法，例如，对于使用含卤素等离子体和/或含氧的半导体蚀刻设备中用于确定等离子体条件（例如，等离子体蚀刻终点）的下游传感器元件有用的类型 等离子体。 这样的传感器元件能够在由等离子体产生的能量气体物质例如氟，氯，碘，溴，氧及其衍生物和自由基的存在下表现出温度变化，并且相应地产生指示其的输出信号 用于确定蚀刻等离子体处理设备中的等离子体条件的温度变化。

    Microelectromechanical device manufacturing process
    4.
    发明授权
    Microelectromechanical device manufacturing process 失效
    微机电装置制造工艺

    公开(公告)号：US06337027B1

    公开(公告)日：2002-01-08

    申请号：US09410166

    申请日：1999-09-30

    Applicant: Kurt D. Humphrey

    Inventor： Kurt D. Humphrey

    IPC: H01L2100

    CPC classification number: B81C1/00928 ,  B81C1/00849 ,  B81C2201/0138 ,  B81C2201/019

    Abstract: The present invention relates to micro electromechanical systems (MEMS) devices and more specifically to a process for manufacturing MEMS devices having at least one suspended structural element. The present invention seeks to provide an improved method for manufacture of MEMS devices having improved safety and increased yield and throughput compared to conventional EDP immersion process techniques. MEMS devices are made using a modified dissolution process that removes, in a selective etch step, inactive silicon to release an active silicon device from a sacrificial substrate. The present invention uses a selective etchant in conjunction with a commercial spray acid processing tool to provide a dissolution process with improved throughput, improved repeatable and uniform etch rates and reduction in the number of processing steps and chemical containment for improved safety. When the etch process is complete, the solvent spray is turned off and a spray of de-ionized water is directed onto composite structure to remove residual solvent without causing suspended elements to adhere to the support substrate.

    Abstract translation: 本发明涉及微机电系统（MEMS）装置，更具体地涉及一种用于制造具有至少一个悬挂结构元件的MEMS装置的方法。 本发明寻求提供一种用于制造具有改进的安全性并且与常规EDP浸渍工艺技术相比增加的产量和产量的MEMS装置的改进方法。 使用改进的溶解过程制造MEMS器件，其在选择性蚀刻步骤中去除非活性硅以从牺牲衬底释放活性硅器件。 本发明使用选择性蚀刻剂与商业喷雾酸处理工具结合，以提供具有改善的生产量，改进的可重复和均匀蚀刻速率的溶解过程以及减少加工步骤和化学容纳物以提高安全性。 当蚀刻过程完成时，关闭溶剂喷雾，并将去离子水的喷雾引导到复合结构上以除去残留的溶剂，而不会使悬浮的元素粘附到载体基底上。

    Method for vapor phase etching of silicon
    10.
    发明申请
    Method for vapor phase etching of silicon 有权
    硅的气相蚀刻方法

    公开(公告)号：US20020195423A1

    公开(公告)日：2002-12-26

    申请号：US10104109

    申请日：2002-03-22

    Applicant: REFLECTIVITY, INC.

    Inventor： Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Hongqin Shi ,  Andrew G. Huibers ,  Peter Heureux

    IPC: C23F001/00 ,  B44C001/22 ,  C03C015/00 ,  C03C025/68

    CPC classification number: B81C1/00 ,  B81B2201/045 ,  B81C1/00476 ,  B81C1/00531 ,  B81C1/00595 ,  B81C99/0025 ,  B81C2201/0138 ,  B82Y30/00 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/32135

    Abstract: The etching of a material in a vapor phase etchant is disclosed where a vapor phase etchant is provided to an etching chamber at a total gas pressure of 10 Torr or more, preferably 20 Torr or even 200 Torr or more. The vapor phase etchant can be gaseous acid etchant, a noble gas halide or an interhalogen. The sample/workpiece that is etched can be, for example, a semiconductor device or MEMS device, etc. The material that is etched/removed by the vapor phase etchant is preferably silicon and the vapor phase etchant is preferably provided along with one or more diluents. Another feature of the etching system includes the ability to accurately determine the end point of the etch step, such as by creating an impedance at the exit of the etching chamber (or downstream thereof) so that when the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the end point of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber. A first plasma or wet chemical etch (or both) can be performed prior to the vapor phase etch.

    Abstract translation: 公开了在气相蚀刻剂中的材料的蚀刻，其中气蚀刻蚀刻剂以10托或更大，优选20托或甚至200托或更大的总气体压力提供给蚀刻室。 气相蚀刻剂可以是气态酸蚀刻剂，惰性气体卤化物或中间卤素。 被蚀刻的样品/工件可以是例如半导体器件或MEMS器件等。通过气相蚀刻剂蚀刻/去除的材料优选为硅，并且气相蚀刻剂优选与一个或多个 稀释剂。 蚀刻系统的另一特征包括能够精确地确定蚀刻步骤的终点，例如通过在蚀刻室的出口处（或其下游）处产生阻抗，使得当气相蚀刻剂从蚀刻室 ，监测蚀刻反应的气体产物，并且可以确定除去过程的终点。 气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室。 可以在气相蚀刻之前执行第一等离子体或湿化学蚀刻（或两者）。

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