公开(公告)号：US09331118B2

公开(公告)日：2016-05-03

申请号：US14028127

申请日：2013-09-16

Applicant: OmniVision Technologies, Inc.

Inventor： Chin-Poh Pang

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14605 ,  H01L27/14623 ,  H01L27/14627

Abstract: A photosensor has a masking layer having an opening over a central photodiode and a first adjacent photodiode, the first adjacent photodiode covered by the masking layer and located sufficiently near the central photodiode that at least some light admitted through the opening over the central photodiode reaches the first adjacent photodiode through the central photodiode. The photosensor also has a second adjacent photodiode; the second adjacent photodiode covered by the masking layer and located sufficiently near the first adjacent photodiode that at least some light admitted through the opening over the central photodiode is capable of reaching the second adjacent photodiode through the first adjacent photodiode. Circuitry is provided for reading the photodiodes and generating a blue, a green, and a red channel signal by processing signals read from the photodiodes.

Abstract translation: 光电传感器具有在中心光电二极管和第一相邻光电二极管上具有开口的掩模层，第一相邻光电二极管被掩蔽层覆盖并且充分靠近中心光电二极管，至少一些通过中心光电二极管上的开口进入的光达到 第一个相邻的光电二极管通过中央光电 光电传感器还具有第二相邻光电二极管; 所述第二相邻光电二极管由所述掩蔽层覆盖并且位于所述第一相邻光电二极管附近，所述至少一些光通过所述中心光电二极管上的所述开口允许通过所述第一相邻光电二极管到达所述第二相邻光电二极管。 提供电路用于读取光电二极管并通过处理从光电二极管读取的信号产生蓝色，绿色和红色通道信号。

公开(公告)号：US20180076247A1

公开(公告)日：2018-03-15

申请号：US15264411

申请日：2016-09-13

Applicant: OmniVision Technologies, Inc.

Inventor： Chin-Poh Pang ,  Boyang Zhang ,  Chia-Ying Liu ,  Wu-Zang Yang ,  Chih-Wei Hsiung ,  Chun-Yung Ai

IPC: H01L27/146 ,  H04N5/374 ,  H04N9/04

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H04N5/374 ,  H04N9/045

Abstract: A backside-illuminated color image sensor with crosstalk-suppressing color filter array includes (a) a silicon layer including an array of photodiodes and (b) a color filter layer on the light-receiving surface of the silicon layer, wherein the color filter layer includes (i) an array of color filters cooperating with the array of photodiodes to form a respective array of color pixels and (ii) a light barrier grid disposed between the color filters to suppress transmission of light between adjacent ones of the color filters. The light barrier is spatially non-uniform across the color filter layer to account for variation of chief ray angle across the array of color filters

公开(公告)号：US10121809B2

公开(公告)日：2018-11-06

申请号：US15264411

申请日：2016-09-13

Applicant: OmniVision Technologies, Inc.

Inventor： Chin-Poh Pang ,  Boyang Zhang ,  Chia-Ying Liu ,  Wu-Zang Yang ,  Chih-Wei Hsiung ,  Chun-Yung Ai

IPC: H01L27/146 ,  H04N5/374 ,  H04N9/04

Abstract: A backside-illuminated color image sensor with crosstalk-suppressing color filter array includes (a) a silicon layer including an array of photodiodes and (b) a color filter layer on the light-receiving surface of the silicon layer, wherein the color filter layer includes (i) an array of color filters cooperating with the array of photodiodes to form a respective array of color pixels and (ii) a light barrier grid disposed between the color filters to suppress transmission of light between adjacent ones of the color filters. The light barrier is spatially non-uniform across the color filter layer to account for variation of chief ray angle across the array of color filters.

公开(公告)号：US09443899B1

公开(公告)日：2016-09-13

申请号：US14932472

申请日：2015-11-04

Applicant: OmniVision Technologies, Inc.

Inventor： Chia-Ying Liu ,  Chin-Poh Pang ,  Chih-Wei Hsiung ,  Vincent Venezia

IPC: H01L27/146 ,  H04N5/369

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14685

Abstract: An improved back side illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor, and associated methods, improve phase detecting capability. The BSI CMOS image sensor has an array of pixels that include a phase detecting pixel (PDP), a composite grid formed of a buried color filter array and composite metal/oxide grid, and a photodiode implant corresponding to the PDP. A PDP mask is fabricated with a deep trench isolation (DTI) structure proximate the PDP and positioned to mask at least part of the photodiode implant such that the PDP mask is positioned between the composite grid and the photodiode implant.

Abstract translation: 改进的背面照明（BSI）互补金属氧化物半导体（CMOS）图像传感器及相关方法，提高相位检测能力。 BSI CMOS图像传感器具有包括相位检测像素（PDP），由掩埋滤色器阵列和复合金属/氧化物栅格形成的复合栅格和对应于PDP的光电二极管注入的像素阵列。 制造具有靠近PDP的深沟槽隔离（DTI）结构的PDP掩模，并且定位成掩模至少部分光电二极管注入，使得PDP掩模位于复合栅格和光电二极管植入物之间。

公开(公告)号：US20150076322A1

公开(公告)日：2015-03-19

申请号：US14028127

申请日：2013-09-16

Applicant: OmniVision Technologies, Inc.

Inventor： Chin-Poh Pang

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14605 ,  H01L27/14623 ,  H01L27/14627

Abstract: A photosensor has a masking layer having an opening over a central photodiode and a first adjacent photodiode, the first adjacent photodiode covered by the masking layer and located sufficiently near the central photodiode that at least some light admitted through the opening over the central photodiode reaches the first adjacent photodiode through the central photodiode. The photosensor also has a second adjacent photodiode; the second adjacent photodiode covered by the masking layer and located sufficiently near the first adjacent photodiode that at least some light admitted through the opening over the central photodiode is capable of reaching the second adjacent photodiode through the first adjacent photodiode. Circuitry is provided for reading the photodiodes and generating a blue, a green, and a red channel signal by processing signals read from the photodiodes.

Abstract translation: 光电传感器具有在中心光电二极管和第一相邻光电二极管上具有开口的掩模层，第一相邻光电二极管被掩蔽层覆盖，并且充分靠近中心光电二极管，至少一些通过中心光电二极管上的开口进入的光达到 第一个相邻的光电二极管通过中央光电二极管。 光电传感器还具有第二相邻光电二极管; 所述第二相邻光电二极管由所述掩蔽层覆盖并且位于所述第一相邻光电二极管附近，所述至少一些光通过所述中心光电二极管上的所述开口允许通过所述第一相邻光电二极管到达所述第二相邻光电二极管。 提供电路用于读取光电二极管并通过处理从光电二极管读取的信号产生蓝色，绿色和红色通道信号。