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    COMBINED VISIBLE AND INFRARED IMAGE SENSOR INCORPORATING SELECTIVE INFRARED OPTICAL FILTER
    2.
    发明申请
    COMBINED VISIBLE AND INFRARED IMAGE SENSOR INCORPORATING SELECTIVE INFRARED OPTICAL FILTER 审中-公开

    公开(公告)号：US20180359431A1

    公开(公告)日：2018-12-13

    申请号：US15620757

    申请日：2017-06-12

    Applicant: OmniVision Technologies, Inc.

    Inventor： Chen-Wei Lu ,  Ping-Hsu Chen ,  Yin Qian ,  Eiichi Funatsu

    IPC: H04N5/33 ,  H04N5/225 ,  H04N5/232

    CPC classification number: H04N5/332 ,  H04N5/2254 ,  H04N5/2256 ,  H04N5/23245 ,  H04N9/045 ,  H04N9/04553

    Abstract: An image sensor system, comprising a pixel array that includes at least a first type pixel and a second type pixel, wherein each first type pixel is configured to sense light of a first optical spectral range; and each second pixel is configured to sense light of a second optical spectral range; an optical filter located above the pixel array, said optical filter configured to pass a third optical spectral range and a fourth optical spectral range that is different from the third optical spectral range, wherein the fourth optical spectral range is less than the second optical spectral range; a light source that emits light in a fifth optical spectral range, wherein the fifth optical spectral range at least overlaps with the fourth optical spectral range; and a controller that controls the image sensor system to selectively operate in a first mode that uses said first optical spectral range, and a second mode that uses said second optical spectral range.

    EDGE REFLECTION REDUCTION
    3.
    发明申请
    EDGE REFLECTION REDUCTION 审中-公开

    公开(公告)号：US20170317124A1

    公开(公告)日：2017-11-02

    申请号：US15430071

    申请日：2017-02-10

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

    IPC: H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687

    Abstract: An image sensor package includes an image sensor with a pixel array disposed in a semiconductor material. A first transparent shield is adhered to the semiconductor material, and the pixel array is disposed between the semiconductor material and the first transparent shield. The image sensor package further includes a second transparent shield, where the first transparent shield is disposed between the pixel array and the second transparent shield. A light blocking layer is disposed between the first transparent shield and the second transparent shield, and the light blocking layer is disposed to prevent light from reflecting off edges of the first transparent shield into the pixel array.

    Method of fabricating multi-wafer image sensor
    4.
    发明授权
    Method of fabricating multi-wafer image sensor 有权

    公开(公告)号：US09748308B2

    公开(公告)日：2017-08-29

    申请号：US15166002

    申请日：2016-05-26

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Yin Qian ,  Dyson H. Tai ,  Jin Li ,  Chen-Wei Lu ,  Howard E. Rhodes

    IPC: H01L27/10 ,  H01L27/146

    CPC classification number: H01L27/14687 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/1469

    Abstract: A method of fabricating an image system includes forming a first wafer that includes a first semiconductor substrate and a first interconnect layer. A pixel array is formed in an imaging region of the first semiconductor substrate and a first insulation-filled trench is formed in a peripheral circuit region of the first semiconductor substrate. Additionally, a second wafer is formed that includes a second semiconductor substrate and a second interconnect layer. A second insulation-filled trench is formed in a second semiconductor substrate, and the first wafer is bonded to the second wafer. A third interconnect layer of a third wafer is bonded to the second wafer. At least one deep via cavity is formed through the first and second interconnect layers and through the first and second insulation-filled trenches. The at least one deep via cavity is filled with a conductive material to form a deep via.

    HIGH DYNAMIC RANGE IMAGE SENSOR WITH REDUCED SENSITIVITY TO HIGH INTENSITY LIGHT
    5.
    发明申请
    HIGH DYNAMIC RANGE IMAGE SENSOR WITH REDUCED SENSITIVITY TO HIGH INTENSITY LIGHT 审中-公开

    公开(公告)号：US20170213863A1

    公开(公告)日：2017-07-27

    申请号：US15239537

    申请日：2016-08-17

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Yin Qian ,  Ming Zhang ,  Chen-Wei Lu ,  Jin Li ,  Chia-Chun Miao ,  Dyson H. Tai

    IPC: H01L27/146

    CPC classification number: H01L27/14607 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

    Abstract: An image sensor includes first and second pluralities of photodiodes interspersed among each other in a semiconductor substrate. Incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of photodiodes. The first plurality of photodiodes has greater sensitivity to the incident light than the second plurality of photodiodes. A metal film layer is disposed over the surface of the semiconductor substrate over the second plurality of photodiodes and not over the first plurality of photodiodes. A metal grid is disposed over the surface of the semiconductor substrate, and includes a first plurality of openings through which the incident light is directed into the first plurality of photodiodes. The metal grid further includes a second plurality of openings through which the incident light is directed through the metal film layer into the second plurality of photodiodes.

    METHOD OF FABRICATING MULTI-WAFER IMAGE SENSOR
    8.
    发明申请
    METHOD OF FABRICATING MULTI-WAFER IMAGE SENSOR 审中-公开
    制造多波幅图像传感器的方法

    公开(公告)号：US20160268333A1

    公开(公告)日：2016-09-15

    申请号：US15166002

    申请日：2016-05-26

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Yin Qian ,  Dyson H. Tai ,  Jin Li ,  Chen-Wei Lu ,  Howard E. Rhodes

    IPC: H01L27/146

    CPC classification number: H01L27/14687 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/1469

    Abstract: A method of fabricating an image system includes forming a first wafer that includes a first semiconductor substrate and a first interconnect layer. A pixel array is formed in an imaging region of the first semiconductor substrate and a first insulation-filled trench is formed in a peripheral circuit region of the first semiconductor substrate. Additionally, a second wafer is formed that includes a second semiconductor substrate and a second interconnect layer. A second insulation-filled trench is formed in a second semiconductor substrate, and the first wafer is bonded to the second wafer. A third interconnect layer of a third wafer is bonded to the second wafer. At least one deep via cavity is formed through the first and second interconnect layers and through the first and second insulation-filled trenches. The at least one deep via cavity is filled with a conductive material to form a deep via.

    Abstract translation: 制造图像系统的方法包括形成包括第一半导体衬底和第一互连层的第一晶片。 像素阵列形成在第一半导体衬底的成像区域中，并且第一绝缘填充沟槽形成在第一半导体衬底的外围电路区域中。 此外，形成包括第二半导体衬底和第二互连层的第二晶片。 在第二半导体衬底中形成第二绝缘填充沟槽，并且将第一晶片接合到第二晶片。 第三晶片的第三互连层被结合到第二晶片。 通过第一和第二互连层并穿过第一和第二绝缘填充沟槽形成至少一个深通孔腔。 至少一个深通孔腔被导电材料填充以形成深通孔。

    METHOD OF FABRICATING MULTI-WAFER IMAGE SENSOR
    9.
    发明申请
    METHOD OF FABRICATING MULTI-WAFER IMAGE SENSOR 有权
    制造多波幅图像传感器的方法

    公开(公告)号：US20160111468A1

    公开(公告)日：2016-04-21

    申请号：US14515307

    申请日：2014-10-15

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Yin Qian ,  Dyson H. Tai ,  Jin Li ,  Chen-Wei Lu ,  Howard E. Rhodes

    IPC: H01L27/146

    CPC classification number: H01L27/14687 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/1469

    Abstract: A method of fabricating an image sensor includes forming a pixel array in an imaging region of a semiconductor substrate and forming a trench in a peripheral region of the semiconductor substrate after forming the pixel array. The peripheral region is on a perimeter of the imaging region. The trench is filled with an insulating material. An interconnect layer is formed after filling the trench with insulating material. A first wafer is bonded to a second wafer. The first wafer includes the interconnect layer and the semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the insulating material. A via cavity is formed through the insulating material. The via cavity extends down to a second interconnect layer of the second wafer. The via cavity is filled with a conductive material to form a via. The insulating material insulates the conductive material from the semiconductor substrate.

    Abstract translation: 制造图像传感器的方法包括在形成像素阵列之后，在半导体衬底的成像区域中形成像素阵列并在半导体衬底的周边区域中形成沟槽。 周边区域位于成像区域的周边。 沟槽填充绝缘材料。 在用绝缘材料填充沟槽之后形成互连层。 第一晶片结合到第二晶片。 第一晶片包括互连层和半导体衬底。 半导体衬底的背面变薄以露出绝缘材料。 通过绝缘材料形成通孔。 通孔腔向下延伸到第二晶片的第二互连层。 通孔腔填充导电材料以形成通孔。 绝缘材料使导电材料与半导体衬底绝缘。

    LATERAL LIGHT SHIELD IN BACKSIDE ILLUMINATED IMAGING SENSORS
    10.
    发明申请
    LATERAL LIGHT SHIELD IN BACKSIDE ILLUMINATED IMAGING SENSORS 审中-公开
    背光照明成像传感器中的侧光

    公开(公告)号：US20140312447A1

    公开(公告)日：2014-10-23

    申请号：US14319807

    申请日：2014-06-30

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Duli Mao ,  Dyson H. Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

    IPC: H01L27/146

    CPC classification number: H01L27/1462 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685

    Abstract: A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element.

    Abstract translation: 背面照明图像传感器包括设置在半导体层中的半导体层和沟槽。 半导体层具有前表面和背面。 半导体层包括设置在半导体层的传感器阵列区域中的像素阵列的光感测元件。 像素阵列被定位成接收穿过半导体层的背面的外部入射光。 半导体层还包括设置在传感器阵列区域外部的半导体层的外围电路区域中的发光元件。 沟槽设置在光感测元件和发光元件之间的半导体层中。

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