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公开(公告)号：US20230061285A1
公开(公告)日：2023-03-02
申请号：US17464192
申请日：2021-09-01
Applicant: OmniVision Technologies, Inc.
IPC: H01L27/146 , G02B1/10 , G02B3/00 , G02B5/30
Abstract: A flare-reducing image sensor includes a plurality of pixels, NP in number, and a plurality of microlenses, NML in number, where each of the plurality of microlenses is aligned to a respective one of the plurality of pixels, such that NP=NML. The flare-reducing image sensor further includes a plurality of phase-shifting layers, NL, in number, where each phase-shifting layer is aligned with a respective one of the plurality of microlenses, where NL, is less than or equal to NML.
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公开(公告)号：US20230035130A1
公开(公告)日：2023-02-02
申请号：US17392023
申请日：2021-08-02
Applicant: OmniVision Technologies, Inc.
Abstract: Embodiments disclosed herein reduce petal flare. A flare-suppressing image sensor includes a plurality of pixels including a first set of pixels and a second set of pixels. The flare-suppressing image sensor further includes plurality of microlenses, where each microlens is aligned to a respective one of the first set of pixels. The flare-suppressing image sensor further includes plurality of sub-microlens, where each microlens array is aligned to a respective one of the second set of pixels.
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Patent Agency Ranking
公开(公告)号：US20210151487A1
公开(公告)日：2021-05-20
申请号：US16689938
申请日：2019-11-20
Applicant: OmniVision Technologies, Inc.
IPC: H01L27/146 , H01L29/423 , H01L29/66 , H01L29/78
Abstract: A pixel includes a semiconductor substrate, a photodiode region, a floating diffusion region, and a dielectric layer. The substrate has a top surface forming a trench lined by the dielectric layer, and having a trench depth relative to a planar region of the top surface. The photodiode region is in the substrate and includes a bottom photodiode section beneath the trench and a top photodiode section adjacent to the trench, adjoining the bottom photodiode section, and extending toward the planar region to a photodiode depth less than the trench depth. The floating diffusion region is adjacent to the trench and has a junction depth less than the trench depth. A top region of the dielectric layer is between the planar region and the junction depth. A bottom region of the dielectric layer is between the photodiode depth and the trench depth, and thicker than the top region.
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公开(公告)号：US20230122521A1
公开(公告)日：2023-04-20
申请号：US18084728
申请日：2022-12-20
Applicant: OmniVision Technologies, Inc.
IPC: H01L27/146
Abstract: A method for preventing defects in a thin film deposited on a semiconductor substrate includes forming a plurality of trenches on a periphery-region of the semiconductor substrate to yield a trenched surface. The semiconductor substrate includes a pixel array; the periphery-region surrounds the pixel array. The trenched surface includes (i) a plurality of trench regions each forming a respective one of the plurality of trenches and (ii) between each pair of adjacent trenches, a respective one of a plurality of inter-trench surfaces. The method also includes depositing the thin film on the surface such that the thin film covers each inter-trench surface and conformally covers each trench region.
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公开(公告)号：US20220367548A1
公开(公告)日：2022-11-17
申请号：US17322399
申请日：2021-05-17
Applicant: OmniVision Technologies, Inc.
Inventor： Qin WANG , Chin Poh PANG
IPC: H01L27/146 , G02B5/20 , G02B5/00
Abstract: A crosstalk-suppressing image sensor includes a semiconductor substrate, an opaque layer, and a spectral filter. The semiconductor substrate includes a photodiode therein and is located beneath a light-exposure region of a back surface of the semiconductor substrate. The opaque layer is on the back surface, partially covers the light-exposure region, and has an opaque-layer thickness perpendicular to an image-plane direction parallel to the back surface. The spectral filter is adjacent to the opaque layer in the image-plane direction, and partially covers the light-exposure region.
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公开(公告)号：US20210399028A1
公开(公告)日：2021-12-23
申请号：US16905670
申请日：2020-06-18
Applicant: OmniVision Technologies, Inc.
IPC: H01L27/146
Abstract: A pixel-array substrate includes a semiconductor substrate and a passivation layer. The semiconductor substrate includes a pixel array surrounded by a periphery region. A back surface of the semiconductor substrate forms, in the periphery region, a plurality of first peripheral-trenches extending into the semiconductor substrate. The passivation layer is on the back surface and lines each of the plurality of first peripheral-trenches.
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7.发明申请公开(公告)号：US20180063424A1
公开(公告)日：2018-03-01
申请号：US15249787
申请日：2016-08-29
Applicant: OmniVision Technologies, Inc.
Inventor： Qin WANG , Gang CHEN , Dajiang YANG
CPC classification number: H04N5/23232 , H04N5/2254 , H04N5/232 , H04N5/374 , H04N9/045
Abstract: A camera system has a lens focusing incoming light through a deflector system having at least one deflector plate onto a photosensor array. An image processor captures at least a first image with the deflector system in a first position and a second image with the deflector system in a second position to provide a focal point offset in a first axis on the photosensor array, and the firmware is configured to prepare an enhanced image from at least the first and second images. A method of imaging includes focusing incoming light through a deflector system having at least one deflector plate onto a photosensor array; receiving at least a first image with the deflector system in a first position; receiving a second image with the deflector system configured providing a focal point offset on the photosensor array; and preparing an enhanced image from the first and second images.
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