公开(公告)号：US20230215887A1

公开(公告)日：2023-07-06

申请号：US18050402

申请日：2022-10-27

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Chen-Wei Lu ,  Jin Li ,  Shao-Fan Kao ,  Tung-Ti Yeh

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/1463 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14685

Abstract: The invention disclose a pixel in an image sensor capable of detecting infrared light and associated fabrication method. The image sensor includes a semiconductor substrate has a first photodiode and a second photodiode adjacent to the first photodiode. A planarized dielectric layer having a recessed region is disposed on a first side of the semiconductor substrate. A first color filter disposed on the planarized dielectric layer aligned with the first photodiode and configured to transmit light of a first wavelength range. A second color filter disposed in the recessed region and on the planarized dielectric layer. The second color filter is aligned with the second photodiode, and configured to transmit light of a second wavelength range that is different from the first wavelength range. A first depth-wise thickness of the first color filter is less than a second depth-wise thickness of the second color filter.