Abstract:
A chip scale package (CSP) structure for an image sensor comprises an image sensor chip, wherein the image sensor chip comprises a semiconductor substrate having a top surface to receive light, a plurality of color filters disposed over the top surface, and a plurality of micro lenses disposed on the plurality of color filters. A low refractive index material is disposed over the image sensor chip, wherein the low refractive index material covers the plurality of micro lenses, and wherein a refractive index of the low refractive index material is lower than a refractive index of the plurality of micro lenses. A cover glass is disposed directly on the low refractive index material, wherein no air gap is between the cover glass and the low refractive index material, and between the low refractive index material and the image sensor chip. Therefore, the cover glass is fully supported by the low refractive index material without any dams.
Abstract:
A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a first transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the first transparent shield. A light blocking layer is deposited and disposed between lateral edges of the pixel array and lateral edges of the first transparent shield, and a second transparent shield is placed on the image sensor package, where the light blocking layer is disposed between the first transparent shield and the second transparent shield.
Abstract:
A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a first transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the first transparent shield. A light blocking layer is deposited and disposed between lateral edges of the pixel array and lateral edges of the first transparent shield, and a second transparent shield is placed on the image sensor package, where the light blocking layer is disposed between the first transparent shield and the second transparent shield.
Abstract:
An image sensor package includes an image sensor with a pixel array disposed in a semiconductor material. A first transparent shield is adhered to the semiconductor material, and the pixel array is disposed between the semiconductor material and the first transparent shield. The image sensor package further includes a second transparent shield, where the first transparent shield is disposed between the pixel array and the second transparent shield. A light blocking layer is disposed between the first transparent shield and the second transparent shield, and the light blocking layer is disposed to prevent light from reflecting off edges of the first transparent shield into the pixel array.
Abstract:
A color filter array for use on a color image sensor includes an oxide grid having sidewalls arranged to define openings in the oxide grid. Each one of the openings is to be disposed over a corresponding pixel cell of the color image sensor. Oxide support structures are disposed in an interior region of each opening in the oxide grid over a corresponding pixel cell of the color image sensor. The openings in the oxide grid are filled with color filter material of a corresponding color filter. A surface tension between each oxide support structure and the surrounding color filter material of the color filter is adapted to provide uniform thickness for the color filters within the corresponding openings in the oxide grid.
Abstract:
An image transformation and multi-view output system and associated method generates output view data from raw image data using a coordinate mapping that reverse maps pixels of the output view data onto the raw image data. The coordinate mapping is stored in a lookup table and incorporates perspective correction and/or distortion correction for a wide angle lens used to capture the raw image data. The use of the lookup table with reverse mapping improves performance of the image transformation and multi-view output system to allow multi-view video streaming of images corrected for one or both of perspective and distortion.
Abstract:
A method for generating a control signal to control an information technology device includes the following steps: (1) capturing, using an image sensor, a current control image of a light source of a remote controller positioned within a field of view of the image sensor; (2) identifying, within the current control image, a current location of light emitted from the light source; (3) determining movement between (a) the current location of the light emitted from the light source and (b) a previous location of the light emitted from the light source determined from a previously captured image; (4) generating a movement control signal based upon the movement; and (5) sending the movement control signal to the information technology device. The method is executed, for example, by a movement control module of an information technology device input system.
Abstract:
An image sensor package includes an image sensor with a pixel array disposed in a semiconductor material. A first transparent shield is adhered to the semiconductor material, and the pixel array is disposed between the semiconductor material and the first transparent shield. The image sensor package further includes a second transparent shield, where the first transparent shield is disposed between the pixel array and the second transparent shield. A light blocking layer is disposed between the first transparent shield and the second transparent shield, and the light blocking layer is disposed to prevent light from reflecting off edges of the first transparent shield into the pixel array.
Abstract:
A method of fabricating an image system includes forming a first wafer that includes a first semiconductor substrate and a first interconnect layer. A pixel array is formed in an imaging region of the first semiconductor substrate and a first insulation-filled trench is formed in a peripheral circuit region of the first semiconductor substrate. Additionally, a second wafer is formed that includes a second semiconductor substrate and a second interconnect layer. A second insulation-filled trench is formed in a second semiconductor substrate, and the first wafer is bonded to the second wafer. A third interconnect layer of a third wafer is bonded to the second wafer. At least one deep via cavity is formed through the first and second interconnect layers and through the first and second insulation-filled trenches. The at least one deep via cavity is filled with a conductive material to form a deep via.
Abstract:
An image sensor includes first and second pluralities of photodiodes interspersed among each other in a semiconductor substrate. Incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of photodiodes. The first plurality of photodiodes has greater sensitivity to the incident light than the second plurality of photodiodes. A metal film layer is disposed over the surface of the semiconductor substrate over the second plurality of photodiodes and not over the first plurality of photodiodes. A metal grid is disposed over the surface of the semiconductor substrate, and includes a first plurality of openings through which the incident light is directed into the first plurality of photodiodes. The metal grid further includes a second plurality of openings through which the incident light is directed through the metal film layer into the second plurality of photodiodes.