LIGHT-TRAPPING IMAGE SENSORS
    1.
    发明申请

    公开(公告)号:US20210242264A1

    公开(公告)日:2021-08-05

    申请号:US16777060

    申请日:2020-01-30

    IPC分类号: H01L27/146 G02B5/20 G02B3/00

    摘要: A light-trapping image sensor includes a pixel array and a lens array. The pixel array is formed in and on a semiconductor substrate and including photosensitive pixels each including a reflective material forming a cavity around a portion of semiconductor material to at least partly trap light that has entered the cavity. The cavity has a ceiling at a light-receiving surface of the semiconductor substrate, and the ceiling forms an aperture for receiving the light into the cavity. The lens array is disposed on the pixel array. Each lens of the lens array is aligned to the aperture of a respective cavity to focus the light into the cavity through the aperture.

    DARK-CURRENT INHIBITING IMAGE SENSOR AND METHOD

    公开(公告)号:US20230154960A1

    公开(公告)日:2023-05-18

    申请号:US17530296

    申请日:2021-11-18

    IPC分类号: H01L27/146

    摘要: A dark-current-inhibiting image sensor includes a semiconductor substrate, a thin and a thin junction. The semiconductor substrate includes a front surface, a back surface opposite the front surface, a photodiode, and a concave surface between the front surface and the back surface. The concave surface extends from the back surface toward the front surface, and defines a trench that surrounds the photodiode in a cross-sectional plane parallel to the back surface. The thin junction extends from the concave surface into the semiconductor substrate, and is a region of the semiconductor substrate. The semiconductor substrate includes a first substrate region, located between the thin junction and the photodiode, that has a first conductive type. The photodiode and the thin junction have a second conductive type opposite the first conductive type.

    IMAGE SENSORS WITH QUANTUM EFFICIENCY ENHANCED BY INVERTED PYRAMIDS

    公开(公告)号:US20210242265A1

    公开(公告)日:2021-08-05

    申请号:US16777193

    申请日:2020-01-30

    IPC分类号: H01L27/146

    摘要: An image sensor with quantum efficiency enhanced by inverted pyramids includes a semiconductor substrate and a plurality of microlenses. The semiconductor substrate includes an array of pixels. Each of the pixels is configured to convert light incident on the pixel to an electrical output signal, the semiconductor substrate having a top surface for receiving the light. The top surface forms a plurality of inverted pyramids in each pixel. The plurality of microlenses are disposed above the top surface and aligned to the plurality of inverted pyramids, respectively.

    IMAGE SENSOR WITH MICRO-STRUCTURED COLOR FILTER

    公开(公告)号:US20210091130A1

    公开(公告)日:2021-03-25

    申请号:US16576603

    申请日:2019-09-19

    IPC分类号: H01L27/146

    摘要: An image sensor includes a two-dimensional photodiode-array formed in a semiconductor substrate, a first waveguide, and a first color filter. The first waveguide is aligned to a first photodiode of the photodiode-array, located above a top substrate surface of the semiconductor substrate. A first core of the first waveguide has a first core width that is less than a pitch of the photodiode-array in a first direction and a second direction corresponding to respective orthogonal dimensions of the photodiode-array. The first color filter is on a top waveguide surface of the first waveguide and has a first non-uniform thickness above the first core. The first waveguide is between the top substrate surface and the first color filter.

    FLARE-SUPPRESSING IMAGE SENSOR
    5.
    发明申请

    公开(公告)号:US20210242262A1

    公开(公告)日:2021-08-05

    申请号:US16777090

    申请日:2020-01-30

    IPC分类号: H01L27/146 G02B3/00

    摘要: A flare-suppressing image sensor includes a first pixel formed in a substrate and a refractive element located above the first pixel. The refractive element has, with respect to a top surface of the substrate, a height profile having at least two one-dimensional local maxima in each of a first cross-sectional plane and a second cross-sectional plane perpendicular to the first cross-sectional plane. Each of the first and second cross-sectional planes is perpendicular to the top surface and intersects the first pixel.