公开(公告)号：US20230215890A1

公开(公告)日：2023-07-06

申请号：US17570006

申请日：2022-01-06

Applicant: OmniVision Technologies, Inc.

Inventor： Seong Yeol MUN ,  Duli MAO ,  Bill PHAN

IPC: H01L27/146 ,  H04N5/3745

CPC classification number: H01L27/1463 ,  H04N5/3745 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

Abstract: A backside-illuminated image sensor includes arrayed photodiodes separated by isolation structures, and interlayer dielectric between first layer of metal interconnect and substrate. The image sensor has barrier metal walls in the interlayer dielectric between isolation structures and first layer interconnect, the barrier metal walls aligned with the isolation structures and disposed between the isolation structures and first layer interconnect. The barrier metal wall deflects light passing through photodiodes of the sensor that would otherwise be reflected by interconnect into different photodiodes. The sensor is formed by providing a partially fabricated semiconductor substrate with photodiodes and source-drain regions formed; forming gate electrodes on a frontside surface of the semiconductor substrate, depositing an etch-stop layer over the gate electrodes; depositing interlayer dielectric on the etch-stop layer; forming trenches extending to the etch-stop layer through the interlayer dielectric, the trenches being between photodiodes; and filling trenches with metal to form barrier metal walls.

公开(公告)号：US20230223416A1

公开(公告)日：2023-07-13

申请号：US17572413

申请日：2022-01-10

Applicant: OmniVision Technologies, Inc.

Inventor： Seong Yeol MUN ,  Bill PHAN ,  Duli MAO

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14685 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627

Abstract: A reduced cross-talk pixel-array substrate includes a semiconductor substrate, a buffer layer, a metal annulus, and an attenuation layer. The semiconductor substrate includes a first photodiode region. A back surface of the semiconductor substrate forms a trench surrounding the first photodiode region in a cross-sectional plane parallel to a first back-surface region of the back surface above the first photodiode region. The buffer layer is on the back surface and has a feature located above the first photodiode region with the feature being one of a recess and an aperture. The metal annulus is on the buffer layer and covers the trench. The attenuation layer is above the first photodiode region.

公开(公告)号：US20210242265A1

公开(公告)日：2021-08-05

申请号：US16777193

申请日：2020-01-30

Applicant: OmniVision Technologies, Inc.

Inventor： Alireza BONAKDAR ,  Zhiqiang LIN ,  Bill PHAN ,  Badrinath PADMANABHAN

IPC: H01L27/146

Abstract: An image sensor with quantum efficiency enhanced by inverted pyramids includes a semiconductor substrate and a plurality of microlenses. The semiconductor substrate includes an array of pixels. Each of the pixels is configured to convert light incident on the pixel to an electrical output signal, the semiconductor substrate having a top surface for receiving the light. The top surface forms a plurality of inverted pyramids in each pixel. The plurality of microlenses are disposed above the top surface and aligned to the plurality of inverted pyramids, respectively.

公开(公告)号：US20220190019A1

公开(公告)日：2022-06-16

申请号：US17118252

申请日：2020-12-10

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanliang LIU ,  Bill PHAN ,  Duli MAO ,  Hui ZANG

IPC: H01L27/146

Abstract: A flicker-mitigating pixel-array substrate includes a semiconductor substrate and a metal annulus. The semiconductor substrate includes a small-photodiode region. A back surface of the semiconductor substrate forms a trench surrounding the small-photodiode region in a cross-sectional plane parallel to a back-surface region of the back surface above the small-photodiode region. The metal annulus (i) at least partially fills the trench, (ii) surrounds the small-photodiode region in the cross-sectional plane, and (iii) extends above the back surface. A method for fabricating a flicker-mitigating pixel-array substrate includes forming a metal layer (i) in a trench that surrounds the small-photodiode region in a cross-sectional plane parallel to a back-surface region of the back surface above the small-photodiode region and (ii) on the back-surface region. The method also includes decreasing a thickness of an above-diode section of the metal layer located above the back-surface region.