CHEMICAL MECHANICAL POLISHING APPARATUS
    1.
    发明申请
    CHEMICAL MECHANICAL POLISHING APPARATUS 有权
    化学机械抛光装置

    公开(公告)号:US20110217910A1

    公开(公告)日:2011-09-08

    申请号:US13033876

    申请日:2011-02-24

    IPC分类号: B24B41/06

    CPC分类号: B24B41/06

    摘要: A chemical mechanical polishing apparatus includes a platen having a first region configured to support a wafer, and a second region disposed outside the first region. The chemical mechanical polishing apparatus further includes a polishing pad disposed on the platen, a pad head to which the polishing pad is attached, a slurry supply configured to supply a slurry onto the wafer, and an injection port disposing on the second region of the platen. The injection port is configured to inject a predetermined gas to an edge of a bottom surface of the wafer and toward the outside of the wafer.

    摘要翻译: 化学机械抛光装置包括具有构造成支撑晶片的第一区域的压板和设置在第一区域外的第二区域。 化学机械抛光装置还包括设置在压板上的抛光垫,附接有抛光垫的焊盘头,配置成将浆料供应到晶片上的浆料供应源和设置在压板的第二区域上的注入口 。 注入口被配置为将预定气体注入到晶片的底表面的边缘并朝向晶片的外部。