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    Chemical mechanical polishing apparatus
    3.
    发明授权
    Chemical mechanical polishing apparatus 有权
    化学机械抛光装置

    公开(公告)号：US08790158B2

    公开(公告)日：2014-07-29

    申请号：US13033876

    申请日：2011-02-24

    申请人： One-Moon Chang ,  Jae-Phil Boo ,  Jong-Bok Kim ,  Soo-Young Tak ,  Jong-Sun Ahn ,  Shin Kim

    发明人： One-Moon Chang ,  Jae-Phil Boo ,  Jong-Bok Kim ,  Soo-Young Tak ,  Jong-Sun Ahn ,  Shin Kim

    IPC分类号： B24B49/03 ,  B24B49/12 ,  B24B37/04

    CPC分类号： B24B41/06

    摘要： A chemical mechanical polishing apparatus includes a platen having a first region configured to support a wafer, and a second region disposed outside the first region. The chemical mechanical polishing apparatus further includes a polishing pad disposed on the platen, a pad head to which the polishing pad is attached, a slurry supply configured to supply a slurry onto the wafer, and an injection port disposing on the second region of the platen. The injection port is configured to inject a predetermined gas to an edge of a bottom surface of the wafer and toward the outside of the wafer.

    摘要翻译： 化学机械抛光装置包括具有构造成支撑晶片的第一区域的压板和设置在第一区域外的第二区域。 化学机械抛光装置还包括设置在压板上的抛光垫，附接有抛光垫的焊盘头，配置成将浆料供应到晶片上的浆料供应源和设置在压板的第二区域上的注入口 。 注入口被配置为将预定气体注入到晶片的底表面的边缘并朝向晶片的外部。

    CHEMICAL MECHANICAL POLISHING APPARATUS
    4.
    发明申请
    CHEMICAL MECHANICAL POLISHING APPARATUS 有权
    化学机械抛光装置

    公开(公告)号：US20110217910A1

    公开(公告)日：2011-09-08

    申请号：US13033876

    申请日：2011-02-24

    申请人： One-Moon CHANG ,  Jae-Phil Boo ,  Jong-Bok Kim ,  Soo-Young Tak ,  Jong-Sun Ahn ,  Shin Kim

    发明人： One-Moon CHANG ,  Jae-Phil Boo ,  Jong-Bok Kim ,  Soo-Young Tak ,  Jong-Sun Ahn ,  Shin Kim

    IPC分类号： B24B41/06

    CPC分类号： B24B41/06

    摘要： A chemical mechanical polishing apparatus includes a platen having a first region configured to support a wafer, and a second region disposed outside the first region. The chemical mechanical polishing apparatus further includes a polishing pad disposed on the platen, a pad head to which the polishing pad is attached, a slurry supply configured to supply a slurry onto the wafer, and an injection port disposing on the second region of the platen. The injection port is configured to inject a predetermined gas to an edge of a bottom surface of the wafer and toward the outside of the wafer.

    摘要翻译： 化学机械抛光装置包括具有构造成支撑晶片的第一区域的压板和设置在第一区域外的第二区域。 化学机械抛光装置还包括设置在压板上的抛光垫，附接有抛光垫的焊盘头，配置成将浆料供应到晶片上的浆料供应源和设置在压板的第二区域上的注入口 。 注入口被配置为将预定气体注入到晶片的底表面的边缘并朝向晶片的外部。

    Method of fabricating a non-volatile memory device having a tunnel-insulating layer including more than two portions of different thickness
    5.
    发明授权
    Method of fabricating a non-volatile memory device having a tunnel-insulating layer including more than two portions of different thickness 有权
    制造具有包括不同厚度的两个以上部分的隧道绝缘层的非易失性存储器件的方法

    公开(公告)号：US06709920B2

    公开(公告)日：2004-03-23

    申请号：US09902243

    申请日：2001-07-10

    申请人： Jae-Phil Boo ,  Soo-Young Tak ,  Kwang-Bok Kim ,  Kyung-Hyun Kim ,  Chang-Ki Hong

    发明人： Jae-Phil Boo ,  Soo-Young Tak ,  Kwang-Bok Kim ,  Kyung-Hyun Kim ,  Chang-Ki Hong

    IPC分类号： H01L218242

    CPC分类号： H01L27/11526 ,  H01L27/11531

    摘要： A method of fabricating a non-volatile memory device, which has a tunnel insulating layer consisting of two or more portions of different thickness, cell transistors, and auxiliary transistors for applying external voltage and for interfacing with peripheral circuits is described. According to the method, the tunnel insulating layer, a conductive layer, and a first insulating layer are sequentially deposited over a semiconductor substrate. The resultant structure is selectively etched to a given depth to form trenches. A second insulating layer is deposited over the substrate including the trenches, and the second insulating layer is selectively removed so as to form element isolation regions consisting of the trenches filled with the second insulating layer. The first insulating layer is selectively removed, and the second insulating layer is selectively removed by a CMP process to expose the conductive layer. The conductive layer is used as the stopping layer during the CMP process.

    摘要翻译： 描述了制造具有由不同厚度的两个或更多个部分组成的隧道绝缘层的单元晶体管和用于施加外部电压并与外围电路接口的辅助晶体管的非易失性存储器件的制造方法。 根据该方法，隧道绝缘层，导电层和第一绝缘层依次沉积在半导体衬底上。 将所得结构选择性地蚀刻到给定的深度以形成沟槽。 在包括沟槽的衬底上沉积第二绝缘层，并且选择性地去除第二绝缘层，以便形成由填充有第二绝缘层的沟槽组成的元件隔离区域。 选择性地去除第一绝缘层，并且通过CMP工艺选择性地去除第二绝缘层以暴露导电层。 在CMP工艺期间，导电层用作停止层。