公开(公告)号：US12100783B2

公开(公告)日：2024-09-24

申请号：US17050793

申请日：2019-04-11

Applicant: OSRAM OLED GmbH

Inventor： Tansen Varghese ,  Adrian Stefan Avramescu

IPC: H01L21/00 ,  H01L27/15 ,  H01L33/00 ,  H01L33/20 ,  H01S5/02 ,  H01S5/04 ,  H01S5/042 ,  H01L33/16

CPC classification number: H01L33/20 ,  H01L27/156 ,  H01L33/0062 ,  H01L33/0095 ,  H01S5/0201 ,  H01S5/041 ,  H01S5/042 ,  H01L33/16 ,  H01S2304/04

Abstract: An optoelectronic semiconductor body is provided with a layer stack with an active region which is configured to emit electromagnetic radiation and which includes a main extension plane, wherein the layer stack comprises side walls which extend transversely to the main extension plane of the active region, and the side walls are covered at least in places with a cover layer which is formed with at least one semiconductor material. In addition, an arrangement of a plurality of optoelectronic semiconductor bodies and a method for producing an optoelectronic semiconductor body are provided.

公开(公告)号：US20210028224A1

公开(公告)日：2021-01-28

申请号：US16624943

申请日：2018-06-14

Applicant: OSRAM OLED GmbH

Inventor： Tansen Varghese

IPC: H01L27/15 ,  H01L25/18

Abstract: An optoelectronic semiconductor component for the emission of multicolored radiation may have a multiplicity of active regions arranged next to one another. The active regions may be configured as microrods or nanorods and configured to generate primary electromagnetic radiation. A first group of the active regions may respectively be followed in an emission direction by a first luminescence conversion element, which is suitable for converting the primary radiation into first secondary radiation. A second group of the active regions is respectively followed in the emission direction by a second luminescence conversion element, which is suitable for converting the primary radiation into second secondary radiation. The primary radiation, the first secondary radiation, and the second secondary radiation having different colors.

公开(公告)号：US20210226090A1

公开(公告)日：2021-07-22

申请号：US17050793

申请日：2019-04-11

Applicant: OSRAM OLED GmbH

Inventor： Tansen Varghese ,  Adrian Stefan Avramescu

IPC: H01L33/20 ,  H01L33/00 ,  H01L27/15 ,  H01S5/02 ,  H01S5/042 ,  H01S5/04

Abstract: An optoelectronic semiconductor body (10) is provided with a layer stack (11) with an active region (13) which is configured to emit electromagnetic radiation and which comprises a main extension plane, wherein the layer stack (11) comprises side walls (15) which extend transversely to the main extension plane of the active region (13), and the side walls (15) are covered at least in places with a cover layer (16) which is formed with at least one semiconductor material. In addition, an arrangement (18) of a plurality of optoelectronic semiconductor bodies (10) and a method for producing an optoelectronic semiconductor body (10) are provided.

公开(公告)号：US11158667B2

公开(公告)日：2021-10-26

申请号：US16624943

申请日：2018-06-14

Applicant: OSRAM OLED GmbH

Inventor： Tansen Varghese

IPC: H01L27/15 ,  H01L25/18

Abstract: An optoelectronic semiconductor component for the emission of multicolored radiation may have a multiplicity of active regions arranged next to one another. The active regions may be configured as microrods or nanorods and configured to generate primary electromagnetic radiation. A first group of the active regions may respectively be followed in an emission direction by a first luminescence conversion element, which is suitable for converting the primary radiation into first secondary radiation. A second group of the active regions is respectively followed in the emission direction by a second luminescence conversion element, which is suitable for converting the primary radiation into second secondary radiation. The primary radiation, the first secondary radiation, and the second secondary radiation having different colors.

公开(公告)号：US11282983B2

公开(公告)日：2022-03-22

申请号：US16626911

申请日：2018-06-21

Applicant: Osram OLED GmbH

Inventor： Tansen Varghese

IPC: H01L33/14 ,  H01L33/00 ,  H01L33/22 ,  H01L33/30 ,  H01L33/38 ,  H01L33/44 ,  H01L33/52

Abstract: A semiconductor chip may have a radiation-permeable support, a semiconductor body, and a transparent current spreading layer. The semiconductor body may have an n-sided semiconductor layer, a p-sided semiconductor layer, and an optically active area therebetween. The semiconductor body may be secured to the support by means of a radiation permeable connection layer. The current spread layer may be based on zinc selenide and may be adjacent to the n-sided semi-conductor layer. A method for producing this type of semiconductor chip is also disclosed.

公开(公告)号：US11177414B2

公开(公告)日：2021-11-16

申请号：US16630495

申请日：2018-07-12

Applicant: Osram OLED GmbH

Inventor： Tansen Varghese ,  Stefan Illek

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/30 ,  H01L33/38

Abstract: An optoelectronic component may include a semiconductor body and a radiation transmissive bonding layer. The semiconductor body may include a first region of a first conductivity type, a second region of a second conductivity type, and an active region. The active region may be disposed between the first region and the second region. The first region may include a recess and a contact region adjacent to the recess. The active region may be arranged to emit electromagnetic radiation. The semiconductor body may have a first radiation exit surface at a main surface of the second region remote from the active region, and a portion of the electromagnetic radiation may exit the semiconductor body through the first radiation exit surface. The semiconductor body may include a first electrical connection layer and a second electrical connection layer where the second electrical connection layer is arranged at least partially in the recess.