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公开(公告)号:US08889471B2
公开(公告)日:2014-11-18
申请号:US13465244
申请日:2012-05-07
申请人: Ovadia Abed , Yunjun Li , James P. Novak , Samuel Kim , Patrick Ferguson
发明人: Ovadia Abed , Yunjun Li , James P. Novak , Samuel Kim , Patrick Ferguson
IPC分类号: H01L31/0224 , H01L31/18 , H01B1/22 , C09D11/02 , B05D5/12 , H01L21/306 , C09K13/00 , B82Y30/00 , H01B1/02
CPC分类号: H01B1/02 , H01L31/022425 , Y02E10/50 , Y10S977/773
摘要: For solar cell fabrication, the addition of precursors to printable media to assist etching through silicon nitride or silicon oxide layer thus affording contact with the substance underneath the nitride or oxide layer. The etching mechanism may be by molten ceramics formed in situ, fluoride-based etching, as well as a combination of the two.
摘要翻译: 对于太阳能电池制造,向可印刷介质添加前体以辅助蚀刻通过氮化硅或氧化硅层,从而与氮化物或氧化物层下面的物质接触。 蚀刻机构可以是通过原位形成的熔融陶瓷,基于氟化物的蚀刻,以及两者的组合。
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公开(公告)号:US20120288991A1
公开(公告)日:2012-11-15
申请号:US13465244
申请日:2012-05-07
申请人: Ovadia Abed , Yunjun Li , James P. Novak , Samuel Kim
发明人: Ovadia Abed , Yunjun Li , James P. Novak , Samuel Kim
CPC分类号: H01B1/02 , H01L31/022425 , Y02E10/50 , Y10S977/773
摘要: For solar cell fabrication, the addition of precursors to printable media to assist etching through silicon nitride or silicon oxide layer thus affording contact with the substance underneath the nitride or oxide layer. The etching mechanism may be by molten ceramics formed in situ, fluoride-based etching, as well as a combination of the two.
摘要翻译: 对于太阳能电池制造,向可印刷介质添加前体以辅助蚀刻通过氮化硅或氧化硅层,从而与氮化物或氧化物层下面的物质接触。 蚀刻机构可以是通过原位形成的熔融陶瓷,基于氟化物的蚀刻,以及两者的组合。
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