公开(公告)号：US20180294232A1

公开(公告)日：2018-10-11

申请号：US16008961

申请日：2018-06-14

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Eugene M. Chow ,  JenPing Lu ,  Armin R. Volkel ,  Bing R. Hsieh ,  Gregory L. Whiting ,  Sean E. Doris

IPC: H01L23/544 ,  H01L23/00

Abstract: A method of forming a charge pattern on a microchip includes depositing a material on the surface of the microchip, and immersing the microchip in a fluid to develop charge in or on the material through interaction with the surrounding fluid.

公开(公告)号：US20230187373A1

公开(公告)日：2023-06-15

申请号：US18164070

申请日：2023-02-03

Applicant: Palo Alto Research Center Incorporated

Inventor： Eugene M. Chow ,  JenPing Lu ,  Armin R. Volkel ,  Bing R. Hsieh ,  Gregory L. Whiting ,  Sean E. Doris

IPC: H01L23/544 ,  H01L23/00

CPC classification number: H01L23/544 ,  H01L24/95 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54433 ,  H01L2224/95085 ,  H01L2224/95145 ,  H01L2924/10253 ,  H01L2924/10329

Abstract: A method of forming a charge pattern on a microchip includes depositing a first material on an insulator surface of the microchip, depositing a material having capability of forming a self-assembled monolayer on the other material, wherein the material comprises at least one material selected from the group consisting of: octadecyltrichlorosilane, phenethyltrichlorosilane, hexamethyldisilazane, allyltrimethoxysilane, or perfluorooctyltrichlorosilanem, and patterning the self-assembled monolayer to reveal a portion of the first material. A method of forming a charge pattern in a microchip includes depositing a first material as one of either a solution processed material or a vapor deposited material to generate a first polarity or first magnitude of charge, depositing a second material as a vapor deposited material to generate a second polarity or second magnitude of charge, and immersing the microchip in a non-polar fluid comprising one selected from the group consisting of: an isoparafinnic liquid, a hydrocarbon liquid and dodecane.

公开(公告)号：US11574876B2

公开(公告)日：2023-02-07

申请号：US16008961

申请日：2018-06-14

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Eugene M. Chow ,  JenPing Lu ,  Armin R. Volkel ,  Bing R. Hsieh ,  Gregory L. Whiting ,  Sean E. Doris

IPC: H01L21/00 ,  H01L23/544 ,  H01L23/00

Abstract: A method of forming a charge pattern on a microchip includes depositing a material on the surface of the microchip, and immersing the microchip in a fluid to develop charge in or on the material through interaction with the surrounding fluid.