IMAGING DEVICE
    1.
    发明公开
    IMAGING DEVICE 审中-公开

    公开(公告)号:US20230170358A1

    公开(公告)日:2023-06-01

    申请号:US18101834

    申请日:2023-01-26

    Abstract: An imaging device including: a semiconductor substrate having a first surface and a second surface opposite to the first surface; a microlens located closer to the first surface than to the second surface; and a first photoelectric converter located between the first surface and the microlens. The first photoelectric converter includes a first electrode, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that converts light into electric charges. The first photoelectric converter is the closest of any photoelectric converter existing between the first surface and the microlens to the first surface. The imaging device includes no photodiode as a photoelectric converter, and a focal point of the microlens is located below a lowermost surface of the photoelectric conversion layer.

    IMAGING DEVICE
    2.
    发明申请

    公开(公告)号:US20210043666A1

    公开(公告)日:2021-02-11

    申请号:US17077013

    申请日:2020-10-22

    Abstract: An imaging device including: a semiconductor substrate having a first and second surface opposite to the first surface; a microlens located closer to the first surface than the second surface; a first photoelectric converter located between the first surface and the microlens, where the first photoelectric converter includes a first electrode, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that converts light into electric charges; and a signal detecting section located in the semiconductor substrate, the signal detecting section being configured to output a signal corresponding to the electric charges. The first photoelectric converter is the closest of any photoelectric converter existing between the first surface and the microlens to the first surface, and a focal point of the microlens is located below a lowermost surface of the photoelectric conversion layer and above the signal detecting section.

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