公开(公告)号：US20160056150A1

公开(公告)日：2016-02-25

申请号：US14779104

申请日：2014-02-25

申请人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

发明人： Shuichi NAGAI ,  Daisuke UEDA ,  Tatsuo MORITA ,  Tetsuzo UEDA

IPC分类号： H01L27/06 ,  H01L29/20 ,  H01L27/07 ,  H01L27/02

CPC分类号： H01L27/0605 ,  H01L27/0207 ,  H01L27/0248 ,  H01L27/0629 ,  H01L27/0727 ,  H01L27/0738 ,  H01L29/2003 ,  H01L29/778 ,  H03K17/0822

摘要： A power semiconductor element includes: a main transistor including a first gate electrode, a first drain electrode, and a first source electrode; a sensor transistor including a second gate electrode, a second drain electrode, and a second source electrode; and a gate switch transistor including a third gate electrode, and a third drain electrode, a third source electrode. The first gate electrode, the second gate electrode, and the third drain electrode are connected, the first drain electrode and the second drain electrode are connected, the first source electrode and the second source electrode are connected via a sensor resistor, the first source electrode and the third source electrode are connected, the second source electrode and the third gate electrode are connected via a switch resistor, and the main transistor, the sensor transistor, and the gate switch transistor are formed with a nitride semiconductor.

摘要翻译： 功率半导体元件包括：主晶体管，包括第一栅电极，第一漏电极和第一源电极; 传感器晶体管，包括第二栅极电极，第二漏极电极和第二源极电极; 以及栅极开关晶体管，其包括第三栅极电极和第三漏极电极，第三源极电极。 第一栅电极，第二栅极电极和第三漏电极连接，第一漏电极和第二漏极连接，第一源电极和第二源极通过传感器电阻连接，第一源电极 并且第三源电极连接，第二源电极和第三栅极经由开关电阻器连接，并且主晶体管，传感器晶体管和栅极开关晶体管由氮化物半导体形成。