公开(公告)号：US11322908B2

公开(公告)日：2022-05-03

申请号：US16670833

申请日：2019-10-31

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Toru Takayama ,  Tohru Nishikawa ,  Tougo Nakatani ,  Katsuya Samonji ,  Takashi Kano ,  Shinji Ueda

IPC: H01S5/34 ,  H01S5/024 ,  H01S5/026 ,  H01S5/22 ,  H01S5/343 ,  H01S5/023 ,  H01S5/0233 ,  H01S5/0235 ,  H01S5/16 ,  H01S5/02 ,  H01S5/0234 ,  F21Y115/30 ,  F21S41/176 ,  F21S41/16 ,  H01S5/20 ,  H01S5/10 ,  H01S5/0237

Abstract: A nitride light emitter includes: a nitride semiconductor light-emitting element including an AlxGa1-xN substrate (0≤x≤1) and a multilayer structure above the AlxGa1-xN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the AlxGa1-xN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the AlxGa1-xN substrate.