公开(公告)号：US3754988A

公开(公告)日：1973-08-28

申请号：US3754988D

申请日：1970-11-20

Applicant: PATENT TECHNOLOGY INT INC

Inventor： BARNES F

IPC: G02F2/02 ,  B44D1/18 ,  B32B31/00 ,  G02B5/14

CPC classification number: G02F2/02 ,  Y10T29/49002 ,  Y10T156/1057

Abstract: A quantum state memory is described made up of a matrix suitable for conducting electromagnetic radiation along the paths of the matrix to the intersecting points. A suitable material is located at the intersecting points characterized by two quantum states which may be generated by atoms, molecules, or ions in liquids, solids, or gases. The switching between the quantum states is accomplished by subjecting the material at the intersecting points to electromagnetic radiation at two frequencies, in one case, and at a single frequency in the opposite case. Detection means are provided to determine the quantum state.

Abstract translation: 描述了量子状态存储器，其由适合于沿矩阵的路径向相交点传导电磁辐射的矩阵组成。 合适的材料位于交叉点，其特征在于可以由液体，固体或气体中的原子，分子或离子产生的两个量子态。 量子态之间的切换是通过在交叉点处的材料在两种频率（在一种情况下）和在相反的情况下以单个频率进行电磁辐射来实现的。 提供检测手段来确定量子态。