Semiconductor device having a multithickness region
    1.
    发明授权
    Semiconductor device having a multithickness region 失效
    具有多重区域的半导体器件

    公开(公告)号:US3803460A

    公开(公告)日:1974-04-09

    申请号:US30719772

    申请日:1972-11-16

    申请人: PHILIPS CORP

    发明人: LEBAILLY J

    摘要: A semiconductor device comprising at least a first surface region and a second region that are separated by a junction having opposite conductivities, the first region being disposed over the second region and including a central zone and an annular peripheral zone having a thickness less than one-third that of the central zone. The peripheral zone separates the central zone from the boundary of the junction and exhibits high electrical resistance. Also, a method of producing such a semiconductor device.

    摘要翻译: 一种半导体器件,包括至少第一表面区域和第二区域,所述第一表面区域和第二区域被具有相反电导率的接头分隔开,所述第一区域设置在所述第二区域上方,并且包括中心区域和具有小于1的厚度的环形周边区域, 中央区域的三分之一。 周边区域将中心区域与接合点的边界分开,并表现出高电阻。 另外,制造这种半导体装置的方法。