公开(公告)号：US3868523A

公开(公告)日：1975-02-25

申请号：US41270473

申请日：1973-11-05

Applicant: PHILIPS CORP

Inventor： KLOPFER ANTON MARTIN ,  GARBE SIEGFRIED ,  FRANK GUNTER ,  PETEREK MANFRED

IPC: C30B19/12 ,  H01J1/34 ,  H01J39/16

CPC classification number: C30B19/12 ,  H01J1/34 ,  H01J2201/3423

Abstract: In order to obtain an optimum freedom in the choice of the material in a semitransparent photocathode which consists of IIIV semiconductor compounds and in which the matching of the lattice constant of the active layer to that of the substrate is achieved by an intermediate layer, and thus to arrive at a sensitivity and/or optical wide band condition which is as high as possible, according to the invention the composition of the intermediate layer is independent of the substrate and of the active layer and its lattice constant differs from the lattice constant of the active layer by less than 0.3% and differs from the grid constant of the substrate up to several per cent, for example up to 3%. Such a photocathode may consist in particular of a substrate of GaP, an intermediate layer of AlxGa1 xAs with x>0.8 and an active layer of GaAs.

Abstract translation: 为了获得在由III-V族半导体化合物组成的半透明光电阴极中选择材料的最佳自由度，并且通过中间层实现了有源层的晶格常数与衬底的晶格常数的匹配， 并且因此达到尽可能高的灵敏度和/或光学宽带状态，根据本发明，中间层的组成与衬底和有源层无关，其晶格常数不同于晶格常数 的活性层小于0.3％，并且不同于衬底的栅格常数达几个百分比，例如高达3％。 这种光电阴极可以特别包括GaP的衬底，具有x> 0.8的Al x Ga 1-x As的中间层和GaAs的有源层。