公开(公告)号：US3698941A

公开(公告)日：1972-10-17

申请号：US3698941D

申请日：1970-09-09

Applicant: PHILIPS CORP

Inventor： NOBEL DIRK DE ,  WAAL JAN A G DE

IPC: H01L21/28 ,  H01L21/00 ,  H01L23/485 ,  B44D1/18 ,  H01L7/00

CPC classification number: H01L21/00 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A METHOD OF LOCALLY APPLYING A METAL CONTACT TO A SEMICONDUCTOR SURFACE, IN WHICH THE SURFACE IS PARTLY COVERED BY AN INSULATING LAYER, AFTER WHICH A METAL LAYER IS APPLIED TO THE WHOLE SURFACE. BY SUBJECTING THE METAL LAYER IN ACCORDANCE WITH THE INVENTION TO ACOUSTIC HIGH-FREQUENCY VIBRATIONS, THE METAL LAYER IS REMOVED FROM THE INSULATING LAYER AND IS LEFT ADHERING TO THE SEMICONDUCTOR MATERIAL. THE ADHESION MAY BE IMPROVED BY A THERMAL TREATMENT PRIOR TO THE VIBRATION TREATMENT.