公开(公告)号：US3595716A

公开(公告)日：1971-07-27

申请号：US3595716D

申请日：1968-05-28

Applicant: PHILIPS CORP

Inventor： KERR JOHN ANTHONY ,  WADHAM ERIC

IPC: H01L21/00 ,  H01L21/265 ,  H01L27/00 ,  H01L29/00 ,  H01L29/73 ,  H01L7/54

CPC classification number: H01L29/00 ,  H01L21/00 ,  H01L21/265 ,  H01L27/00 ,  H01L29/73 ,  Y10S148/043 ,  Y10S148/106 ,  Y10S148/144 ,  Y10S148/151

Abstract: A METHOD OF FABRICATING A TRANSISTOR HAVING EMITTER, BASE AND COLLECT OR REGIONS IS DISCLOSED. IN A FIRST OPERATION THERE IS FORMED IN A SEMICONDUCTOR BODY PART OF ONE CONDUCTIVITY TYPE AT ONE SURFACE THEREOF A SHALLOW SURFACE EMITTER REGION BY INCORPORATING THEREIN A RELATIVELY HIGH CONCENTRATION OF ONE-TYPE FORMING IMPURITIES. NEXT IONS OF AN IMPURITY OF THE OPPOSITE CONDUCTIVITY TYPE ARE IMPLANTED INTO SAID BODY PART FROM SAID ONE SURFACE OVER AN AREA ENCOMPASSING BUT LARGER THAN THE EMITTER REGION SUCH THAT THE IONS EXTEND THROUGH THE PREVIOUSLY MADE EMITTER REGION TO FORM A BASE REGION, SAID BASE ION IMPURITY CONCENTRATION EXCEEDING THE IMPURITY CONCENTRATION OF THE INITIAL BODY PART BUT BEING LESS THAN THE EMITTER IMPURITY CONCENTRATION FORMING AN OPPOSITE TYPE BASE REGION DEFINING SPACED COLLECTOR AND EMITTER JUNCTIONS WHICH EXTEND TO THE SAID ONE SURFACE. FINALLY, THE ASSEMBLY IS SUBJECTED TO A BASE ANNEALING TREATEMENT TO REMOVE SEMICONDUCTOR ION DAMAGE.