公开(公告)号：US3595716A

公开(公告)日：1971-07-27

申请号：US3595716D

申请日：1968-05-28

Applicant: PHILIPS CORP

Inventor： KERR JOHN ANTHONY ,  WADHAM ERIC

IPC: H01L21/00 ,  H01L21/265 ,  H01L27/00 ,  H01L29/00 ,  H01L29/73 ,  H01L7/54

CPC classification number: H01L29/00 ,  H01L21/00 ,  H01L21/265 ,  H01L27/00 ,  H01L29/73 ,  Y10S148/043 ,  Y10S148/106 ,  Y10S148/144 ,  Y10S148/151

Abstract: A METHOD OF FABRICATING A TRANSISTOR HAVING EMITTER, BASE AND COLLECT OR REGIONS IS DISCLOSED. IN A FIRST OPERATION THERE IS FORMED IN A SEMICONDUCTOR BODY PART OF ONE CONDUCTIVITY TYPE AT ONE SURFACE THEREOF A SHALLOW SURFACE EMITTER REGION BY INCORPORATING THEREIN A RELATIVELY HIGH CONCENTRATION OF ONE-TYPE FORMING IMPURITIES. NEXT IONS OF AN IMPURITY OF THE OPPOSITE CONDUCTIVITY TYPE ARE IMPLANTED INTO SAID BODY PART FROM SAID ONE SURFACE OVER AN AREA ENCOMPASSING BUT LARGER THAN THE EMITTER REGION SUCH THAT THE IONS EXTEND THROUGH THE PREVIOUSLY MADE EMITTER REGION TO FORM A BASE REGION, SAID BASE ION IMPURITY CONCENTRATION EXCEEDING THE IMPURITY CONCENTRATION OF THE INITIAL BODY PART BUT BEING LESS THAN THE EMITTER IMPURITY CONCENTRATION FORMING AN OPPOSITE TYPE BASE REGION DEFINING SPACED COLLECTOR AND EMITTER JUNCTIONS WHICH EXTEND TO THE SAID ONE SURFACE. FINALLY, THE ASSEMBLY IS SUBJECTED TO A BASE ANNEALING TREATEMENT TO REMOVE SEMICONDUCTOR ION DAMAGE.

公开(公告)号：US3865633A

公开(公告)日：1975-02-11

申请号：US32435773

申请日：1973-01-17

Applicant: PHILIPS CORP

Inventor： SHANNON JOHN MARTIN ,  KERR JOHN ANTHONY

IPC: C30B31/22 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/263 ,  H01L21/265 ,  H01L7/54

CPC classification number: H01L21/00 ,  H01L21/263 ,  Y10S438/912 ,  Y10S438/916

Abstract: In order to provide a semiconductor surface layer of desired properties at a substantially constant depth from all parts of the surface, the body is subjected to bombardment with a beam of energetic particles so as to cause internal crystal damage in the layer over a controlled distance while the semiconductor is maintained at an elevated temperature causing enhanced diffusion of substrate impurities into the layer along the boundary of the damaged zone.

Abstract translation: 为了从表面的所有部分以基本恒定的深度提供具有所需特性的半导体表面层，用高能粒子束对本体进行轰击，以便在受控距离上引起层中的内部晶体损伤，同时 半导体保持在升高的温度，导致衬底杂质沿受损区域的边界增加到层中。

公开(公告)号：US3653978A

公开(公告)日：1972-04-04

申请号：US3653978D

申请日：1969-03-07

Applicant: PHILIPS CORP

Inventor： ROBINSON DAVID PHYTHIAN ,  BEALE JULIAN ROBERT ANTHONY ,  SHANNON JOHN MARTIN ,  KERR JOHN ANTHONY ,  DAS MUKUNDA BEHARI

IPC: H01L21/265 ,  H01L21/76 ,  H01L21/8236 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/00 ,  H01L29/10 ,  H01L29/78 ,  H01L7/54

CPC classification number: H01L29/7838 ,  H01L21/26513 ,  H01L21/823807 ,  H01L27/0883 ,  H01L27/0925 ,  H01L29/00 ,  H01L29/1045 ,  Y10S148/053 ,  Y10S148/118 ,  Y10S148/145

Abstract: A method for making an IGFET is described. The method utilizes impurity ion implantation into the surface channel to determine the conductivity thereof. The advantages include special impurity profiles providing improved performance, better control over important parameters such as threshold voltage, the manufacture of improved tetrodes, and the manufacture of improved ICs using for example N- and P-channel devices, and depletion and enhancement devices combined in a single chip.

Abstract translation: 描述了制造IGFET的方法。 该方法利用杂质离子注入表面通道来确定其电导率。 这些优点包括提供改进性能的特殊杂质分布，更好地控制诸如阈值电压，改进的四极杆的制造以及使用例如N和P沟道器件的改进的IC的制造，以及组合的耗尽和增强器件 单芯片