公开(公告)号：US20210305015A1

公开(公告)日：2021-09-30

申请号：US17213065

申请日：2021-03-25

Applicant: PSK INC.

Inventor： KWANG-BO SIM ,  JI-HOON YOON ,  DONG-WHEE SHIN ,  HYUN-WOO OH ,  KA-RAM KANG

IPC: H01J37/32 ,  H01L21/67

Abstract: Disclosed herein is an apparatus for processing a substrate. The apparatus comprises: a process processing unit for providing a processing space in which a substrate processing is performed; a plasma generation unit for generating plasma, wherein the plasma generation unit comprises: a plasma chamber having a plasma generation space; a gas supply unit for supplying a processing gas to the plasma generation space; a power application unit for generating plasma by exiting the processing gas in the plasma generation space; a diffusion chamber disposed below the plasma chamber and having a diffusion space for diffusing the plasma generated in the plasma generation space and/or the processing gas supplied to the plasma generation space to be uniformly delivered to the processing space, wherein at least one perforated diffusion plate may be disposed in the diffusion space.