公开(公告)号：US20200286934A1

公开(公告)日：2020-09-10

申请号：US16878667

申请日：2020-05-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： JUNJI HIRASE ,  YOSHIHIRO SATO ,  YASUYUKI ENDOH ,  HIROYUKI AMIKAWA

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374 ,  H04N5/355

Abstract: An imaging device includes a semiconductor substrate including a semiconductor region including an impurity of a first conductivity type, a first diffusion region that is in contact with the semiconductor region, that includes an impurity of a second conductivity type, and that converts incident light into charges, and a second diffusion region that includes an impurity of the second conductivity type and that accumulates at least a part of the charges flowing from the first diffusion region, a first transistor that includes a first gate electrode and that includes the second diffusion region as one of a source and a drain, a contact plug electrically connected to the second diffusion region, a capacitive element one end of which is electrically connected to the contact plug, and a second transistor that includes a second gate electrode, the second gate electrode being electrically connected to the one end of the capacitive element.

公开(公告)号：US20220310673A1

公开(公告)日：2022-09-29

申请号：US17838911

申请日：2022-06-13

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： JUNJI HIRASE ,  YOSHIHIRO SATO ,  YASUYUKI ENDOH ,  HIROYUKI AMIKAWA

IPC: H01L27/146 ,  H04N5/355 ,  H04N5/374 ,  H04N5/378 ,  H01L27/02

Abstract: An imaging device having a semiconductor substrate including: a semiconductor region including an impurity of a first conductivity type, a first diffusion region that is in contact with the semiconductor region, that includes an impurity of a second conductivity type different from the first conductivity type, and that converts incident light into charges, and a second diffusion region that includes an impurity of the second conductivity type and that directly accumulates at least a part of the charges generated in the first diffusion region. The imaging device further includes a contact plug in contact with the second diffusion region, and a capacitive element electrically connected to the second diffusion region through the contact plug.

公开(公告)号：US20190288018A1

公开(公告)日：2019-09-19

申请号：US16279157

申请日：2019-02-19

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YUUKO TOMEKAWA ,  TAKAHIRO KOYANAGI ,  HIROYUKI AMIKAWA ,  YASUYUKI ENDOH

IPC: H01L27/146

Abstract: An imaging device includes: a semiconductor substrate; a first photoelectric converter which is disposed in the semiconductor substrate; a second photoelectric converter different from the first photoelectric converter, which is disposed in the semiconductor substrate; a wiring layer disposed on or above the semiconductor substrate; and a capacitor which is disposed in the wiring layer and surrounds the first photoelectric converter in plan view. The capacitor includes a first electrode, a second electrode, and a dielectric layer disposed between the first electrode and the second electrode. The first electrode is connected to one of the first photoelectric converter and the second photoelectric converter.