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公开(公告)号：US20240186343A1
公开(公告)日：2024-06-06
申请号：US18442157
申请日：2024-02-15
Inventor： JUNJI HIRASE , AKIO NAKAJUN , YUUKO TOMEKAWA
IPC: H01L27/146 , H01L31/0224 , H01L31/055
CPC classification number: H01L27/14605 , H01L27/14618 , H01L27/14623 , H01L31/022425 , H01L31/055
Abstract: An imaging device includes: a semiconductor substrate; an effective pixel region including an effective pixel; a non-effective pixel region that is located around the effective pixel region and that does not include the effective pixel; a photoelectric converter that is located above the semiconductor substrate and that includes a first portion located in the effective pixel region and a second portion located in the non-effective pixel region; a light-shielding film that is located above the second portion of the photoelectric converter and that contains titanium or tantalum; and a functional film that is located on the light-shielding film and that is in contact with the light-shielding film. The functional film has a thickness less than a thickness of the light-shielding film.
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公开(公告)号：US20230336886A1
公开(公告)日：2023-10-19
申请号：US18340886
申请日：2023-06-26
Inventor： MASASHI MURAKAMI , MAKOTO SHOUHO , YOSHIHIRO SATO , KAZUKO NISHIMURA , JUNJI HIRASE
IPC: H04N25/59 , H01L27/146
CPC classification number: H04N25/59 , H01L27/14643 , H01L27/14612
Abstract: An imaging device includes a charge accumulator, a first transistor, and a first capacitive element. The first transistor has a first source, a first drain, and a first gate electrode electrically connected to one of the first source and the first drain. The first capacitive element holds the charges and has a first terminal. A fixed potential is supplied to the other of the first source and the first drain. One of the first source and the first drain is always electrically connected to the first terminal of the first capacitive element from start to end of an exposure period.
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公开(公告)号：US20170250216A1
公开(公告)日：2017-08-31
申请号：US15418662
申请日：2017-01-27
Inventor： YOSHIHIRO SATO , JUNJI HIRASE
IPC: H01L27/146
CPC classification number: H01L27/14665 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14616 , H01L27/1462 , H01L27/14636 , H01L27/14638 , H01L27/14643 , H01L27/307
Abstract: An imaging device includes a unit pixel cell including: a semiconductor substrate including a first region exposed to a surface of the semiconductor substrate in a first area, and a second region directly adjacent to the first region and exposed to the surface in a second area; a photoelectric converter; a contact plug connected to the second region; a first transistor including the second region as one of a source and a drain, a first electrode covering a first portion of the first area, and a first insulation layer between the first electrode and the semiconductor substrate; a second electrode covering a second portion of the first area; and a second insulation layer between the second electrode and the semiconductor substrate. When seen in a direction perpendicular to the surface, a contact between the second region and the contact plug is located between the first electrode and the second electrode.
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公开(公告)号：US20240171877A1
公开(公告)日：2024-05-23
申请号：US18346757
申请日：2023-07-03
Inventor： JUNJI HIRASE , TAKAYOSHI YAMADA , KAZUKO NISHIMURA
IPC: H04N25/77 , H04N23/667 , H04N25/57 , H04N25/60
CPC classification number: H04N25/77 , H04N23/667 , H04N25/57 , H04N25/60
Abstract: An imaging apparatus includes: a photoelectric converter that generates charge through photoelectric conversion; a charge accumulator in which the charge is accumulated; and a metal-oxide-semiconductor capacitor including a first terminal, a second terminal, a gate, an oxide layer, and at least one semiconductor region. During exposure, the first terminal is electrically connected to the charge accumulator. The gate is electrically connected to the first terminal. The at least one semiconductor region is electrically connected to the second terminal. The oxide layer is located between the gate and the at least one semiconductor region.
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公开(公告)号：US20230262364A1
公开(公告)日：2023-08-17
申请号：US18302863
申请日：2023-04-19
Inventor： SOGO OTA , JUNJI HIRASE
IPC: H04N25/78 , H04N25/771
CPC classification number: H04N25/78 , H04N25/771
Abstract: An imaging device includes a first photoelectric converter that converts light into a charge, a first charge storage that stores the charge, a first capacitor, an output circuit electrically connected to the first capacitor, and a first interposing transistor including a gate electrode, a source, and a drain. A potential of the first charge storage, a potential of the gate electrode, and a potential of one of the source and the drain are continuously the same during a control cycle period. By turning on the first interposing transistor, the first charge storage and the first capacitor are electrically connected.
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Patent Agency Ranking
公开(公告)号：US20180315786A1
公开(公告)日：2018-11-01
申请号：US15961964
申请日：2018-04-25
Inventor： JUNJI HIRASE , MASASHI MURAKAMI
IPC: H01L27/146 , H04N5/369 , G02B7/04
Abstract: An imaging device includes: a pixel including a photoelectric converter including a pixel electrode, a counter electrode, and a photoelectric conversion fila converting light into a charge, an amplification transistor a first gate of which is connected to the pixel electrode, a reset transistor one of second source and drain of which is connected to the pixel electrode, and a feedback transistor one of third source and drain of which is connected to the other of the second source and drain; and a first voltage supply circuit supplying a first voltage to the counter electrode. The reset transistor has such a characteristic that when a voltage equal to or higher than a clipping voltage is supplied between the second gate and the one of the second source and drain, the reset transistor is turned off. The clipping voltage is lower than the first voltage.
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公开(公告)号：US20150340393A1
公开(公告)日：2015-11-26
申请号：US14714293
申请日：2015-05-17
Inventor： TOKUHIKO TAMAKI , JUNJI HIRASE , SHIGEO YOSHII
IPC: H01L27/146
CPC classification number: H01L27/14636 , H01L27/14609 , H01L27/14623 , H01L27/14632 , H01L27/14643
Abstract: An imaging device includes a semiconductor substrate and at least one unit pixel cell provided to a surface of the semiconductor substrate. Each of the at least one unit pixel cell includes: a photoelectric converter including a pixel electrode and a photoelectric conversion layer located on the pixel electrode, the photoelectric converter converting incident light into electric charges; a charge detection transistor that includes a part of the semiconductor substrate and detects the electric charges; and a reset transistor that includes a gate electrode and initializes a voltage of the photoelectric converter. The pixel electrode is located above the charge detection transistor. The reset transistor is located between the charge detection transistor and the pixel electrode. When viewed from a direction normal to the surface of the semiconductor substrate, at least a part of the gate electrode is located outside the pixel electrode.
Abstract translation: 成像装置包括半导体衬底和设置在半导体衬底的表面上的至少一个单位像素单元。 所述至少一个单位像素单元中的每一个包括：光电转换器，包括像素电极和位于所述像素电极上的光电转换层，所述光电转换器将入射光转换成电荷; 电荷检测晶体管，其包括半导体衬底的一部分并检测电荷; 以及包括栅电极并初始化光电转换器的电压的复位晶体管。 像素电极位于电荷检测晶体管的上方。 复位晶体管位于电荷检测晶体管和像素电极之间。 当从垂直于半导体衬底的表面的方向观察时，栅电极的至少一部分位于像素电极的外部。
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公开(公告)号：US20250081713A1
公开(公告)日：2025-03-06
申请号：US18950278
申请日：2024-11-18
Inventor： SHUNSUKE ISONO , YUUKO TOMEKAWA , JUNJI HIRASE , RYOTA SAKAIDA
IPC: H10K39/32
Abstract: A method for manufacturing an imaging device includes forming a photoelectric conversion film such that a ratio of an overlapping area of the photoelectric conversion film and a support substrate in plan view to an area of the support substrate in plan view is greater than 0% and less than 100%. The method includes performing first etching to reduce an area of the photoelectric conversion film in plan view.
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公开(公告)号：US20240423002A1
公开(公告)日：2024-12-19
申请号：US18814437
申请日：2024-08-23
Inventor： JUNJI HIRASE , HIDEYUKI UTSUMI , YUUKO TOMEKAWA , TAKANORI DOI , SHUNSUKE ISONO
IPC: H10K39/32
Abstract: A photoelectric converter includes a support face, and a photoelectric conversion film. The photoelectric conversion film is disposed at the support face. In a first cross-section parallel to a perpendicular direction that is perpendicular to the support face, the photoelectric conversion film has a first sloped face. In the first cross-section, the inclination angle of the first sloped face relative to a first parallel direction, which is parallel to the support face, is defined as a first slope angle. The first slope angle is greater than 0° and less than or equal to 5°.
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公开(公告)号：US20170264840A1
公开(公告)日：2017-09-14
申请号：US15446545
申请日：2017-03-01
Inventor： JUNJI HIRASE , YOSHIHIRO SATO , YOSHINORI TAKAMI , MASAYUKI TAKASE , MASASHI MURAKAMI
IPC: H04N5/361 , H04N5/369 , H04N5/3745 , H01L27/146
CPC classification number: H04N5/361 , H01L27/14612 , H01L27/14636 , H01L27/14643 , H04N5/359 , H04N5/363 , H04N5/3698 , H04N5/3745
Abstract: An imaging device includes a semiconductor layer and a pixel cell. The pixel cell includes an impurity region of a first conductivity type, the impurity region located in the semiconductor layer, a photoelectric converter electrically connected to the impurity region and located above the semiconductor layer, a first transistor having a first gate, a first source and a first drain, one of the first source and the first drain electrically connected to the impurity region, a second transistor having a second gate of a second conductivity type different from the first conductivity type, a second source and a second drain, the second transistor including the impurity region as one of the second source and the second drain, the second gate electrically connected to the impurity region, and a third transistor having a third gate, a third source and a third drain, the third gate electrically connected to the photoelectric converter.
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