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公开(公告)号：US20240054397A1
公开(公告)日：2024-02-15
申请号：US18255034
申请日：2021-10-14
Inventor： Jeffry NAINGGOLAN , Yuya SUGASAWA , Hisaji MURATA , Yoshinori SATOU , Hisashi AIKAWA
IPC: G06N20/00
CPC classification number: G06N20/00
Abstract: A processing system includes a first acquirer, a second acquirer, a third acquirer, an identifier, and an extractor. The first acquirer is configured to acquire a plurality of pieces of learning data to which labels have been assigned. The second acquirer is configured to acquire a learned model generated based on the plurality of pieces of learning data. The third acquirer is configured to acquire identification data to which a label has been assigned. The identifier is configured to identify the identification data on a basis of the learned model. The extractor is configured to extract, based on an index which is applied in the learned model and which relates to similarity between the identification data and each of the plurality of pieces of learning data, one or more pieces of learning data similar to the identification data from the plurality of pieces of learning data.
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公开(公告)号：US20220014701A1
公开(公告)日：2022-01-13
申请号：US17486495
申请日：2021-09-27
Inventor： Tatsuya KABE , Hideyuki ARAI , Hisashi AIKAWA , Yuki SUGIURA , Akito INOUE , Mitsuyoshi MORI , Kentaro NAKANISHI , Yusuke SAKATA
IPC: H04N5/378 , H01L27/146 , H04N5/374
Abstract: A light detector is configured such that a light receiving portion having APDs and a peripheral circuit portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral circuit portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral circuit portion has an n-type MISFET provided at a p-well and an n-well provided to surround side and bottom portions of the p-well.
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公开(公告)号：US20240121530A1
公开(公告)日：2024-04-11
申请号：US18541932
申请日：2023-12-15
Inventor： Tatsuya KABE , Hideyuki ARAI , Hisashi AIKAWA , Yuki SUGIURA , Akito INOUE , Mitsuyoshi MORI , Kentaro NAKANISHI , Yusuke SAKATA
IPC: H04N25/75 , H01L27/146 , H04N25/766
CPC classification number: H04N25/75 , H01L27/14612 , H01L27/14636 , H01L27/14643 , H04N25/766
Abstract: A light detector is configured such that a light receiving portion having APDs and a peripheral portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral portion has an n-type MISFET provided at a p-well and an n-well provided to surround entire side and bottom portions of the p-well.
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公开(公告)号：US20230122673A1
公开(公告)日：2023-04-20
申请号：US17911614
申请日：2021-03-09
Inventor： Junko ONOZAKI , Koji OBATA , Hisashi AIKAWA , Yuya SUGASAWA
IPC: G06N20/00
Abstract: A data generation method includes a first acquisition step, a second acquisition step, and a generation step. The first acquisition step includes acquiring result information about a result of a classification executed by a living being on a target. The second acquisition step includes acquiring execution information about execution of the classification. The generation step includes generating data for machine learning based on the result information and the execution information. The data for machine learning includes learning data and evaluation information about evaluation of the learning data.
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