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公开(公告)号:US20200381367A1
公开(公告)日:2020-12-03
申请号:US16872801
申请日:2020-05-12
Inventor: Kiyoshi ARITA , Shogo OKITA , Hidehiko KARASAKI
IPC: H01L23/544 , H01L21/66 , H01L21/268 , H01L21/78 , B23K26/57 , B23K26/0622 , B23K26/18 , B23K26/351
Abstract: An element chip manufacturing method including: preparing a semiconductor substrate including a first layer having a first principal surface, and a second layer having a second principal surface, the first layer provided with element regions, a dicing region, and an alignment mark, wherein the first layer includes a semiconductor layer, and the second layer includes a metal layer adjacent to the semiconductor layer; irradiating a first laser beam absorbed in the metal film and passing through the semiconductor layer, from the second principal surface side to a first region corresponding to the mark; imaging the semiconductor substrate from the second principal surface side with a camera, and then calculating a second region corresponding to the dicing region on the second principal surface; irradiating a second laser beam to the second region from the second principal surface side; and dicing the semiconductor substrate into a plurality of element chips.