公开(公告)号：US20150281620A1

公开(公告)日：2015-10-01

申请号：US14740113

申请日：2015-06-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MANABU USUDA ,  YUTAKA HIROSE ,  YOSHIHISA KATO ,  NOBUKAZU TERANISHI

IPC: H04N5/378 ,  H01L31/107 ,  H04N5/357 ,  H01L27/146

CPC classification number: H04N5/378 ,  G01J1/44 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14665 ,  H01L31/107 ,  H01L2924/381 ,  H04N5/357 ,  H04N5/361 ,  H04N5/369 ,  H04N5/37455

Abstract: A semiconductor photodetector has at least one unit pixel having a photoelectric conversion part, a charge storage part, and a detection circuit. The photoelectric conversion part includes a charge multiplication region in which incident light is converted into a charge, and the charge is multiplied by avalanche multiplication. The charge storage part is connected to the photoelectric conversion part and stores a signal charge from the photoelectric conversion part. The detection circuit is connected to the charge storage part, converts the signal charge stored in the charge storage part into a voltage, passes the voltage through an amplifier to amplify the voltage, and outputs the amplified voltage.

Abstract translation: 半导体光电检测器具有至少一个具有光电转换部分，电荷存储部分和检测电路的单位像素。 光电转换部包括入射光转换为电荷的电荷倍增区域，电荷乘以雪崩倍增。 电荷存储部分连接到光电转换部分并存储来自光电转换部分的信号电荷。 检测电路连接到电荷存储部分，将存储在电荷存储部分中的信号电荷转换为电压，使电压通过放大器放大，并输出放大的电压。