SPUTTERING DEVICE AND SPUTTERING METHOD

    公开(公告)号:US20220005680A1

    公开(公告)日:2022-01-06

    申请号:US17354920

    申请日:2021-06-22

    Abstract: A sputtering device includes: a vacuum chamber in which a target material and a substrate are disposable in a manner of facing each other; a DC power supply being electrically connectable to the target material; a gas supply source configured to introduce a film forming gas containing a nitrogen gas into the vacuum chamber; and a pulsing unit configured to pulse a current flowing from the DC power supply to the target material. The sputtering device forms a nitride thin film having a ternary or more composition containing nitrogen on the substrate by generating plasma in the vacuum chamber using a sintered alloy target material having a binary or more composition as the target material.

    GAS SENSOR DEVICE
    4.
    发明申请

    公开(公告)号:US20220003706A1

    公开(公告)日:2022-01-06

    申请号:US17354925

    申请日:2021-06-22

    Abstract: A gas sensor device includes: a first electrode; a second electrode; a metal oxide layer that is disposed between the first electrode and the second electrode and is in contact with the first electrode and the second electrode; an interlayer insulating film that covers a part of the first electrode, a part of the second electrode, and a part of the metal oxide layer; and a hydrogen permeable film that allows only hydrogen to permeate, a local region that is in contact with the second electrode is provided inside the metal oxide layer, the local region having a higher oxygen deficiency than an oxygen deficiency of the other region in the metal oxide layer, an opening that exposes a gas contact portion which is a part of a main surface of the second electrode is provided in the interlayer insulating film, and the hydrogen permeable film is provided to cover at least the gas contact portion.

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