-
公开(公告)号:US20160197210A1
公开(公告)日:2016-07-07
申请号:US15072903
申请日:2016-03-17
Inventor: Naofumi HAYASHI , Takahiro MISHIMA , Tsuyoshi TAKAHAMA , Tsutomu YAMAGUCHI
IPC: H01L31/0224
CPC classification number: H01L31/022458 , H01L31/022441 , H01L31/03529 , H01L31/048 , H01L31/0516 , H01L31/0747 , Y02E10/50
Abstract: A solar cell includes: a base substrate that has a principle surface; a first semiconductor layer provided in a first region on the principle surface; a second semiconductor layer provided in a second region on the principle surface; an n-side electrode provided on the first semiconductor layer; a p-side electrode provided on the second semiconductor layer; and grooves that separate the n-side electrode and the p-side electrode from each other. The respective widths of the grooves in a direction in which the n-side electrode and the p-side electrode are spaced apart are set to be wider in the outer peripheral region than in the inner region.
Abstract translation: 太阳能电池包括:具有主面的基底; 设置在所述主表面上的第一区域中的第一半导体层; 设置在所述主表面上的第二区域中的第二半导体层; 设置在所述第一半导体层上的n侧电极; 设置在所述第二半导体层上的p侧电极; 以及将n侧电极和p侧电极分离的槽。 n侧电极和p侧电极间隔开的方向上的沟槽宽度相对于内侧区域的宽度设定得比外周区域宽。
-
公开(公告)号:US20160336464A1
公开(公告)日:2016-11-17
申请号:US15220394
申请日:2016-07-27
Inventor: Masato SHIGEMATSU , Naofumi HAYASHI
IPC: H01L31/0224 , H01L31/20
CPC classification number: H01L31/022441 , H01L31/0747 , H01L31/075 , H01L31/1804 , H01L31/20 , Y02E10/547 , Y02P70/521
Abstract: A solar cell includes: a semiconductor substrate having a light-receiving surface and a back surface; a first-conductivity-type first semiconductor layer on the back surface; a second-conductivity-type second semiconductor layer on the back surface; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; and an insulating layer in a boundary region between a first-conductivity-type region of the first semiconductor layer and a second-conductivity-type region of the second semiconductor layer. The insulating layer has an inclined side surface adjacent the second-conductivity-type region inclined such that the thickness of the insulating layer decreases with decreasing distance from the second-conductivity-type region. The width of the inclined surface in a direction perpendicular to the thickness direction of the insulating layer and toward the second-conductivity-type region is 10 to 300 times the thickness of the insulating layer in a region excluding the inclined surface.
Abstract translation: 太阳能电池包括:具有受光面和背面的半导体基板; 背面上的第一导电型第一半导体层; 位于背面的第二导电型第二半导体层; 电连接到第一半导体层的第一电极; 电连接到第二半导体层的第二电极; 以及在第一半导体层的第一导电型区域和第二半导体层的第二导电型区域之间的边界区域中的绝缘层。 绝缘层具有与第二导电类型区域相邻的倾斜侧表面,使得绝缘层的厚度随着与第二导电类型区域的距离的减小而减小。 倾斜表面在与绝缘层的厚度方向垂直的方向上朝向第二导电型区域的宽度为不包括倾斜表面的区域中绝缘层的厚度的10至300倍。
-
公开(公告)号:US20160268470A1
公开(公告)日:2016-09-15
申请号:US15164874
申请日:2016-05-26
Inventor: Naofumi HAYASHI , Mitsuaki MORIGAMI , Masato SHIGEMATSU , Takahiro MISHIMA
IPC: H01L31/20 , H01L31/0224
CPC classification number: H01L31/202 , H01L31/022441 , H01L31/022491 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A solar cell manufacturing method includes: forming a first amorphous semiconductor layer of one conductivity type on a main surface of a semiconductor substrate; forming an insulation layer on the first amorphous semiconductor layer; etching to remove the insulation layer and the first amorphous semiconductor layer in a predetermined first region; forming a second amorphous semiconductor layer of an other conductivity type on the insulation layer after the etching, the other conductivity type being different from the one conductivity type; and etching to remove the second amorphous semiconductor layer in a predetermined second region, wherein the etching to remove the insulation layer and the first amorphous semiconductor layer in a predetermined first region includes: applying an etching paste to the insulation layer in the predetermined first region; and etching to remove the insulation layer and the first amorphous semiconductor layer in the predetermined first region using the etching paste.
Abstract translation: 太阳能电池制造方法包括:在半导体衬底的主表面上形成一种导电类型的第一非晶半导体层; 在所述第一非晶半导体层上形成绝缘层; 蚀刻以在预定的第一区域中去除绝缘层和第一非晶半导体层; 在蚀刻之后在绝缘层上形成另一种导电类型的第二非晶半导体层,另一种导电类型不同于一种导电类型; 以及蚀刻以在预定的第二区域去除所述第二非晶半导体层,其中在预定的第一区域中去除所述绝缘层和所述第一非晶半导体层的所述蚀刻包括:在所述预定的第一区域中的所述绝缘层上施加蚀刻浆料; 并使用蚀刻膏蚀刻以除去预定的第一区域中的绝缘层和第一非晶半导体层。
-
公开(公告)号:US20160093754A1
公开(公告)日:2016-03-31
申请号:US14863579
申请日:2015-09-24
Inventor: Tsuyoshi TAKAHAMA , Naofumi HAYASHI , Taiki HASHIGUCHI , Akimichi MAEKAWA
IPC: H01L31/0224
CPC classification number: H01L31/022441 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A solar cell includes: a semiconductor substrate of one conductivity type; a first semiconductor layer of the one conductivity type on the semiconductor substrate; a second semiconductor layer of the other conductivity type on the semiconductor substrate; an insulation layer between the first and second semiconductor layers in an area where the first and second semiconductor layers layer overlap each other; a first region where the first semiconductor layer is joined to the semiconductor substrate; a second region where the second semiconductor layer is joined to the semiconductor substrate; and a third region, which is a part of the first region, where the insulation layer is provided. The first region includes first finger sections and a first busbar section. The second region includes second finger sections and a second busbar section. At least a part of the first busbar section is provided in the third region.
Abstract translation: 太阳能电池包括:一种导电类型的半导体衬底; 半导体衬底上的一种导电类型的第一半导体层; 在半导体衬底上的另一导电类型的第二半导体层; 在第一和第二半导体层层彼此重叠的区域中的第一和第二半导体层之间的绝缘层; 第一半导体层与半导体基板接合的第一区域; 第二区域,其中第二半导体层接合到半导体衬底; 以及第三区域,其是设置有绝缘层的第一区域的一部分。 第一区域包括第一手指部分和第一母线段。 第二区域包括第二指部和第二母线段。 第一母线段的至少一部分设置在第三区域中。
-
公开(公告)号:US20150340531A1
公开(公告)日:2015-11-26
申请号:US14718161
申请日:2015-05-21
Inventor: Naofumi HAYASHI , Takahiro MISHIMA , Keiichiro MASUKO
IPC: H01L31/075 , H01L31/18
Abstract: A solar cell is provided that comprising a semiconductor substrate having a first conductivity type; a first semiconductor layer having the first conductivity type, and on a principal surface of the semiconductor substrate; an insulation layer on the first semiconductor layer; a protective layer on the insulation layer; and a second semiconductor layer having a second conductivity type, and on the semiconductor substrate and the protective layer. A recessed region is positioned at a lateral side of the insulation layer, the recessed region formed by recessing a side surface of the insulation layer inward from a side surface of the first semiconductor layer and a side surface of the protective layer, and the second semiconductor layer is positioned in the recessed region above the first semiconductor layer in the recessed region.
Abstract translation: 提供一种太阳能电池,其包括具有第一导电类型的半导体衬底; 具有第一导电类型的第一半导体层,以及半导体衬底的主表面上; 第一半导体层上的绝缘层; 绝缘层上的保护层; 以及具有第二导电类型的第二半导体层,并且在半导体衬底和保护层上。 凹陷区域位于绝缘层的横向侧,通过将绝缘层的侧表面从第一半导体层的侧表面和保护层的侧表面向内凹陷而形成的凹陷区域,以及第二半导体 层位于凹陷区域中的第一半导体层上方的凹陷区域中。
-
-
-
-