公开(公告)号：US09680001B2

公开(公告)日：2017-06-13

申请号：US14788791

申请日：2015-07-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Daisuke Shibata ,  Noboru Negoro

IPC: H01L29/778 ,  H01L29/423 ,  H01L29/66 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205 ,  H01L29/06 ,  H01L29/872 ,  H01L29/417

CPC classification number: H01L29/7787 ,  H01L29/0684 ,  H01L29/1029 ,  H01L29/1033 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/872

Abstract: A nitride semiconductor device includes: a substrate; a buffer layer formed on the substrate; a laminated body formed by two or more cycles of semiconductor layers each including a first nitride semiconductor layer, and a second nitride semiconductor layer having a larger band gap than a band gap of the first nitride semiconductor layer, the first and second nitride semiconductor layers being laminated in this order on the buffer layer; a first electrode; and a second electrode. A channel layer is formed in each of the semiconductor layers at an interface between the first nitride semiconductor layer and the second nitride semiconductor layer. A carrier concentration of the channel layer in the uppermost semiconductor layer is lower than a carrier concentration of each of the channel layers of the other semiconductor layers.