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公开(公告)号:US20220345128A1
公开(公告)日:2022-10-27
申请号:US17640980
申请日:2020-12-07
Inventor: Yuta NAGATOMI , Shingo ENOMOTO , Songbaek CHOE , Osamu TABATA , Noboru NEGORO
IPC: H03K17/567 , H03K17/06 , H03K17/16 , H02M1/00
Abstract: A gate drive circuit that drives a power device by controlling charge and discharge of gate capacitance of the power device includes: a first semiconductor switch that charges the gate capacitance by being brought into conduction according to a first control signal; a second semiconductor switch that discharges the gate capacitance by being brought into conduction according to a second control signal; and a slew rate control circuit that is connected between a gate of the power device and a ground line, and controls a slew rate during discharge. The slew rate control circuit includes a capacitor and a third semiconductor switch connected in series. The third semiconductor switch is brought into conduction according to the second control signal.
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公开(公告)号:US20200186145A1
公开(公告)日:2020-06-11
申请号:US16793970
申请日:2020-02-18
Inventor: Shuichi NAGAI , Shingo ENOMOTO , Noboru NEGORO , Yasufumi KAWAI , Songbaek CHOE , Osamu TABATA
IPC: H03K17/567 , H02M7/217
Abstract: A gate driving circuit that controls a switching element includes: a startup switch which is provided between a gate voltage source and an output terminal; a termination switch which is provided between the output terminal and an output ground terminal; a startup resistor provided between a gate and a source of the startup switch; and a termination resistor provided between a gate and a source of the termination switch. At least one of the startup resistor or the termination resistor is configured to adjust a resistance value.
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