公开(公告)号：US20200186145A1

公开(公告)日：2020-06-11

申请号：US16793970

申请日：2020-02-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shuichi NAGAI ,  Shingo ENOMOTO ,  Noboru NEGORO ,  Yasufumi KAWAI ,  Songbaek CHOE ,  Osamu TABATA

IPC: H03K17/567 ,  H02M7/217

Abstract: A gate driving circuit that controls a switching element includes: a startup switch which is provided between a gate voltage source and an output terminal; a termination switch which is provided between the output terminal and an output ground terminal; a startup resistor provided between a gate and a source of the startup switch; and a termination resistor provided between a gate and a source of the termination switch. At least one of the startup resistor or the termination resistor is configured to adjust a resistance value.

公开(公告)号：US20150318445A1

公开(公告)日：2015-11-05

申请号：US14800852

申请日：2015-07-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Songbaek CHOE ,  Naomi ANZUE ,  Ryou KATO ,  Toshiya YOKOGAWA

IPC: H01L33/40 ,  H01L33/50 ,  H01L33/32 ,  H01L33/06 ,  H01L33/16

CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01L33/325 ,  H01L33/502 ,  H01L2224/16225

Abstract: A nitride-based semiconductor light-emitting device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region having an m-plane as a growing plane; and an Ag electrode provided so as to be in contact with the growing plane of the p-type semiconductor region, wherein the Ag electrode has a thickness in a range of not less than 200 nm and not more than 1,000 nm; an integral intensity ratio of an X-ray intensity of a (111) plane on the growing plane of the Ag electrode to that of a (200) plane is in a range of not less than 20 and not more than 100; and the Ag electrode has a reflectance of not less than 70%.

Abstract translation: 氮化物系半导体发光元件包括：氮化物系半导体多层结构，其包含具有m面作为生长面的p型半导体区域; 以及设置成与p型半导体区域的生长平面接触的Ag电极，其中Ag电极的厚度在不小于200nm且不大于1000nm的范围内; Ag电极的生长面上的（111）面的X射线强度与（200）面的X射线强度的积分强度比在20以上且100以下的范围内， 并且Ag电极具有不小于70％的反射率。

公开(公告)号：US20220345128A1

公开(公告)日：2022-10-27

申请号：US17640980

申请日：2020-12-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yuta NAGATOMI ,  Shingo ENOMOTO ,  Songbaek CHOE ,  Osamu TABATA ,  Noboru NEGORO

IPC: H03K17/567 ,  H03K17/06 ,  H03K17/16 ,  H02M1/00

Abstract: A gate drive circuit that drives a power device by controlling charge and discharge of gate capacitance of the power device includes: a first semiconductor switch that charges the gate capacitance by being brought into conduction according to a first control signal; a second semiconductor switch that discharges the gate capacitance by being brought into conduction according to a second control signal; and a slew rate control circuit that is connected between a gate of the power device and a ground line, and controls a slew rate during discharge. The slew rate control circuit includes a capacitor and a third semiconductor switch connected in series. The third semiconductor switch is brought into conduction according to the second control signal.