公开(公告)号：US20230420981A1

公开(公告)日：2023-12-28

申请号：US18253345

申请日：2021-11-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yuta NAGATOMI ,  Masafumi NAKAMURA ,  Masatoshi NAKASE ,  Hiroki AKASHI ,  Kinya KATO

IPC: H02J9/06 ,  B60L3/00 ,  B60R16/033

CPC classification number: H02J9/061 ,  B60L3/0046 ,  B60R16/033

Abstract: A backup power supply system is designed to supply, when a power supply has caused a failure, power from a first electrical storage device to a plurality of loads. The plurality of loads includes a first load and a second load. The first load is connected to a first power supply line. The backup power supply system includes a backflow prevention switch provided between the first load and the second load on the first power supply line and making the first power supply line electrically conductive or non-conductive by turning ON and OFF. The backflow prevention switch includes an internal diode having an anode connected to one side including the first load and a cathode connected to the other side including the second load.

公开(公告)号：US20240106265A1

公开(公告)日：2024-03-28

申请号：US18257816

申请日：2021-12-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hiroki AKASHI ,  Masafumi NAKAMURA ,  Masatoshi NAKASE ,  Yuta NAGATOMI ,  Kinya KATO

IPC: H02J9/06 ,  B60R16/033 ,  H02J7/00 ,  H02J7/34

CPC classification number: H02J9/068 ,  B60R16/033 ,  H02J7/0068 ,  H02J7/345 ,  H02J9/061 ,  H02J2207/50 ,  H02J2310/48

Abstract: A backup power supply control system includes: a first semiconductor switch that switches a main power supply line to an electrically conductive state or an electrically non-conductive state; and an auxiliary power supply switch that switches an auxiliary power supply line to the electrically conductive state or the electrically non-conductive state. A first driving unit controls, in a non-failure state, a second semiconductor switch, connected between a gate and source of a first semiconductor switch, OFF and thereby controls the first semiconductor switch ON. The first driving unit ensures, in the failure state, at least a gate-plateau voltage of the first semiconductor switch as a drive voltage for the second semiconductor switch. When a failure detection unit detects the failure state, the first driving unit controls the first semiconductor switch OFF by controlling the second semiconductor switch ON and a second driving unit controls the auxiliary power supply switch ON.

公开(公告)号：US20240079886A1

公开(公告)日：2024-03-07

申请号：US18261784

申请日：2021-12-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kinya KATO ,  Yuta NAGATOMI ,  Masafumi NAKAMURA ,  Masatoshi NAKASE ,  Hiroki AKASHI

IPC: H02J7/00

CPC classification number: H02J7/0024 ,  H02J7/007182 ,  H02J2207/10

Abstract: An electrical storage device control system includes a plurality of electrical storage devices and a plurality of charger circuits. The plurality of electrical storage devices are charged by a main power supply. The plurality of charger circuits are connected between the main power supply and the plurality of electrical storage devices. A mode of connection between the plurality of electrical storage devices being charged is switched to either a first connection mode or a second connection mode, depending on a voltage difference between an input voltage for the main power supply and a charging voltage based on respective voltages at the plurality of electrical storage devices. In the first connection mode, the plurality of electrical storage devices are connected together in series. In the second connection mode, the plurality of electrical storage devices are connected in parallel to the main power supply.

公开(公告)号：US20220345128A1

公开(公告)日：2022-10-27

申请号：US17640980

申请日：2020-12-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yuta NAGATOMI ,  Shingo ENOMOTO ,  Songbaek CHOE ,  Osamu TABATA ,  Noboru NEGORO

IPC: H03K17/567 ,  H03K17/06 ,  H03K17/16 ,  H02M1/00

Abstract: A gate drive circuit that drives a power device by controlling charge and discharge of gate capacitance of the power device includes: a first semiconductor switch that charges the gate capacitance by being brought into conduction according to a first control signal; a second semiconductor switch that discharges the gate capacitance by being brought into conduction according to a second control signal; and a slew rate control circuit that is connected between a gate of the power device and a ground line, and controls a slew rate during discharge. The slew rate control circuit includes a capacitor and a third semiconductor switch connected in series. The third semiconductor switch is brought into conduction according to the second control signal.