公开(公告)号：US20150263279A1

公开(公告)日：2015-09-17

申请号：US14642957

申请日：2015-03-10

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YUKIO HAYAKAWA ,  YOSHIO KAWASHIMA

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1253 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1675

Abstract: A resistive nonvolatile storage device includes a first interlayer insulating layer provided above a substrate, a contact hole penetrating through the first interlayer insulating layer, a contact layer wholly covering a bottom surface and a sidewall surface of the contact hole and extending to at least partially cover an upper surface of the first interlayer insulating layer, a contact plug filled in the contact hole, an upper surface of the contact plug being positioned below an upper surface of the contact layer, a lower electrode provided on both the contact plug and the contact layer that is provided on the part of the upper surface of the first interlayer insulating layer, and a resistance change layer provided on the lower electrode, and an upper electrode that is provided on the resistance change layer.

Abstract translation: 电阻性非易失性存储装置包括设置在基板上方的第一层间绝缘层，穿过第一层间绝缘层的接触孔，完全覆盖底表面的接触层和接触孔的侧壁表面，并延伸至至少部分覆盖 所述第一层间绝缘层的上表面，填充在所述接触孔中的接触塞，所述接触插塞的上表面位于所述接触层的上表面的下方，设置在所述接触插塞和所述接触层两者上的下电极 设置在第一层间绝缘层的上表面的一部分上，以及设置在下电极上的电阻变化层，以及设置在电阻变化层上的上电极。

公开(公告)号：US20150171142A1

公开(公告)日：2015-06-18

申请号：US14559914

申请日：2014-12-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIO KAWASHIMA ,  YUKIO HAYAKAWA ,  ATSUSHI HIMENO

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1675

Abstract: A nonvolatile memory device includes an insulating layer, oxygen diffusion prevention layers disposed on the insulating layer, a plurality of contact plugs, each of the plurality of the contact plugs penetrating through each of the plurality of the oxygen diffusion prevention layers and at least a part of the insulating layer, and a plurality of resistance-variable elements, each of the plurality of the resistance-variable elements covering each of the plurality of the contact plugs exposed on surfaces of the oxygen diffusion prevention layers and being electrically connected to each of the plurality of the contact plugs Each of the oxygen diffusion prevention layers is provided only between the insulating layer and each of the plurality of the resistance-variable elements to correspond to each of the plurality of the contact plugs arranged for each of the plurality of the resistance-variable elements.

Abstract translation: 非易失性存储器件包括绝缘层，设置在绝缘层上的氧扩散防止层，多个接触插塞，多个接触插塞中的每一个穿透多个氧扩散防止层中的每一个，以及至少一部分 和多个电阻可变元件，所述多个电阻可变元件中的每一个覆盖在所述氧扩散防止层的表面上暴露的所述多个所述接触插塞中的每一个，并且电连接到所述绝缘层 多个接触插塞每个氧扩散防止层仅设置在绝缘层和多个电阻可变元件中的每一个之间，以对应于为多个电阻中的每一个布置的多个接触插塞中的每一个 可变元素