Multilayer varistor
    1.
    发明授权

    公开(公告)号:US12224090B2

    公开(公告)日:2025-02-11

    申请号:US17796143

    申请日:2021-12-17

    Abstract: A multilayer varistor has a stack structure including a plurality of layers stacked in a third direction. The multilayer varistor includes a first internal electrode electrically connected to a first external electrode, a second internal electrode electrically connected to the second external electrode, and a third internal electrode electrically connected to the third external electrode. The first internal electrode is disposed between the second internal electrode and the third internal electrode in the third direction.

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